Solid phase epitaxy of molecular beam deposited amorphous GaAs on Si

Yoshino, Kiyohiko; Murakami, Kouichi; Yokoyama, Shin; Masuda, Kohzoh
June 1989
Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2562
Academic Journal
Solid phase epitaxial (SPE) crystallization of amorphous GaAs on (100) Si tilted by 4° toward <011> formed by molecular beam deposition (MBD) was first achieved by cw Kr laser irradiation for short durations. The ratio of As to Ga (y/x) in deposited amorphous GaxAsy films was varied from 0.4 to 1.2. During the laser irradiation, movement of the amorphous/crystalline interface was measured using time-resolved optical reflectivity (TROR). It was found from TROR and micro-Raman scattering measurements that hetero-SPE is attained in samples with As/Ga ratios ranging from 0.8 to 1.1 and that the interface roughness is larger than that observed in homo-SPE (e.g., MBD GaAs on GaAs and P+ ion-implanted GaAs).


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