TITLE

Ion channeling analysis of a Si1-xGex(As)/Si strained layer

AUTHOR(S)
Moore, J. A.; Lennard, W. N.; Massoumi, G. R.; Jackman, T. E.; Baribeau, J-M.; Jackman, J. A.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2571
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A strained layer of Si1-x Gex (As)/Si has been grown by molecular beam epitaxy (MBE) with the As dopant introduced by 1 keV ion implantation during growth. Analysis of the layer was made using secondary-ion mass spectrometry (SIMS), Rutherford backscattering (RBS), and proton-induced x-ray emission (PIXE)/channeling, using 2 MeV H+ ions. The layer thickness (∼1.4 μm) and composition (x∼0.015; nAs ∼6×1018 cm-3) measurements by SIMS, RBS, and PIXE were in agreement. RBS, PIXE/channeling showed that the crystalline quality of the strained layer was equivalent to that of the Si substrate. The substitutional fraction (∼0.75) of the As dopant was determined by PIXE/channeling.
ACCESSION #
9831667

 

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