Diffusion and drift of Si dopants in δ-doped n-type AlxGa1-xAs

Schubert, E. F.; Tu, C. W.; Kopf, R. F.; Kuo, J. M.; Lunardi, L. M.
June 1989
Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2592
Academic Journal
The study of diffusion and drift of Si in AlxGa1-xAs by means of capacitance-voltage measurements reveals that low substrate temperatures during growth by molecular beam epitaxy are required to achieve δ-function-like doping profiles. The diffusion coefficient of Si in Al0.3Ga0.7As is determined. We further show theoretically that the random Poisson distribution (usually assumed for dopant distributions in semiconductors) should be modified at high dopant concentrations due to repulsive interactions of impurities.


Related Articles

  • Sputtered SiNx film for self-aligned Si-Zn diffusion into GaAs and AlGaAs. Zou, W. X.; Boudreau, R.; Han, H. T.; Bowen, T.; Shi, Song Stone; Mui, D. S. L.; Merz, J. L. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6244 

    Presents a study which described the use of sputtered silicon nitride film for self-aligned silicon-zinc diffusion into gallium arsenide and aluminum gallium arsenide semiconductors. Theoretical background on silicon and zinc diffusions; Experimental methods; Results and discussion.

  • Background doping dependence of silicon diffusion in p-type GaAs. Deppe, D. G.; Holonyak, N.; Kish, F. A.; Baker, J. E. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p998 

    Junction depth measurements via scanning electron microscopy and secondary ion mass spectroscopy are used to characterize silicon diffusion in GaAs crystals that contain varying amounts of zinc background doping. The zinc concentration is found to control the silicon diffusion process. A reason...

  • Photoreflectance study of gallium arsenide grown on Si. Dutta, M.; Shen, H.; Vernon, S. M.; Dixon, T. M. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1775 

    Low-temperature linear polarized photoreflectance is used to study the stress and its release in thick GaAs grown on Si. We find that the GaAs layer is mainly composed of two regions with two kinds of stress, biaxial and uniaxial. Four features, two from each region due to the split valence...

  • Selective-area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air. Dagata, J. A.; Tseng, W.; Bennett, J.; Evans, C. J.; Schneir, J.; Harary, H. H. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2437 

    Selective-area epitaxial growth of gallium arsenide on n-Si(100) substrates is reported, where the oxide (SiOx) mask consists of 1–2 monolayer-thick features patterned onto a silicon substrate using a scanning tunneling microscope (STM) operating in air. The technique for generating the...

  • The effect of the pattern shape of Hall devices in the electrical characterization of Si-implanted GaAs. Hyuga, Fumiaki // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p1940 

    Analyzes the effects of the pattern shape of Hall devices on the electrical characterization of silicon-implanted gallium arsenide (GaAs). Information on the effectiveness of the Greek-cross pattern in reducing the error due to finite-sized contact in Hall-effect measurements; Role of the...

  • Diffusion of atomic silicon in gallium arsenide. Schubert, E. F.; Stark, J. B.; Chiu, T. H.; Tell, B. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p293 

    Silicon impurities with an initial Dirac-delta-function-like distribution profile are diffused into GaAs using rapid thermal annealing. The diffusion of atomic Si is determined by a novel method of comparing experimental capacitance-voltage profiles with a corresponding self-consistent profile...

  • Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1-xAs. Zarem, H. A.; Lebens, J. A.; Nordstrom, K. B.; Sercel, P. C.; Sanders, S.; Eng, L. E.; Yariv, A.; Vahala, K. J. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2622 

    The ambipolar diffusion length and carrier lifetime are measured in AlxGa1-xAs for several mole fractions in the interval 0

  • Influence of SiO[sub 2] Protective Films on the Diffusion of Atomic Hydrogen during the Hydrogenation of Epitaxial n-GaAs. Panin, A. V.; Torkhov, N. A. // Semiconductors;Jun2000, Vol. 34 Issue 6, p671 

    The surface relief of SiO[sub 2] films and the influence of these films on the in-diffusion of atomic hydrogen in a semiconductor in the course of hydrogenation were investigated by atomic-force microscopy and scanning tunneling microscopy. The mesostructures appearing as a corrugation on the...

  • Disordering of Ga1-xAlxAs-GaAs quantum well structures by donor sulfur diffusion. Rao, E. V. K.; Thibierge, H.; Brillouet, F.; Alexandre, F.; Azoulay, R. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p867 

    We show here, for the first time, that disordering (alloy mixing) on group III sublattice of GaAIAs-GaAs quantum well (QW) structures can be accomplished by the introduction ora group V site substitutional donor impurity. This is achieved by performing donor sulfur diffusions at 850 °C (for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics