Homoepitaxial growth of ZnSe on dry-etched substrates

Ohkawa, K.; Karasawa, T.; Yoshida, A.; Hirao, T.; Mitsuyu, T.
June 1989
Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2553
Academic Journal
High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as-polished substrates in photoluminescence (PL) measurements at 11 K. The low-temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free-exciton emission at 2.804 eV and a dominant donor-bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.


Related Articles

  • Growth of ZnSe on Ge(100) substrates by molecular-beam epitaxy. Yamaguchi, Eiji; Takayasu, Ichiro; Minato, Tetsuo; Kawashima, Mitsuo // Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p885 

    Investigates the epitaxial growth of zinc selenide on germanium substrates by molecular-beam epitaxy. Physical properties of the material; Details on the experiment; Discussion on the results of the study.

  • Defect characterization of etch pits in ZnSe based epitaxial layers. U’Ren, G. D.; Goorsky, M. S.; Meis-Haugen, G.; Law, K. K.; Miller, T. J.; Haberern, K. W. // Applied Physics Letters;8/19/1996, Vol. 69 Issue 8, p1089 

    Three distinct etch pit features in ZnSe based epitaxial layers have been identified. The features were observed with optical dark field microscopy and confirmed to be pits using scanning electron microscopy. Using transmission electron microscopy, we associated different etch pits with...

  • Molecular beam epitaxy of p-type conducting ZnSe and ZnSSe by simple nitrogen gas doping without.... Hishida, Yuji; Yoshie, Tomoyuki // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p270 

    Investigates the molecular beam epitaxy of p-type conducting zinc selenide and zinc-sulfur selenide. Application of simple nitrogen gas doping technique without plasma activation; Factors affecting the p-type conduction in the N[sub 2]-gas doped zinc selenide; Fabrication of light emitting...

  • Nitrogen doping during atomic layer epitaxial growth of ZnSe. Zhu, Z.; Horsburgh, G. // Applied Physics Letters;12/25/1995, Vol. 67 Issue 26, p3927 

    Examines the growth and characterization of nitrogen doping during atomic layer epitaxial growth of zinc selenide. Use of in situ reflection high electron energy diffraction and ex situ capacitance-voltage profiling and photoluminescence spectroscopy; Effect of the Fermi level at a growing...

  • Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular-beam epitaxy. Allen, J. W.; Reid, D. T.; Sibbett, W.; Sleat, W.; Zheng, Jia-Zhen; Hommel, D.; Jobst, B. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1731 

    Examines the growth of a series of chlorine-doped epitaxial layers of zinc-selenide by molecular-beam epitaxy. Effect of gallium arsenide buffer layer on light emission and deep-level concentrations; Significance of the experiments to the making of light-emitting diodes and lasers; Properties...

  • ZnSe/ZnSe0.92S0.08/GaAs single-crystal waveguides as visible modulators. Jupina, M. H.; Garmire, E. M.; Shibata, N.; Zembutsu, S. // Applied Physics Letters;12/31/1990, Vol. 57 Issue 27, p2894 

    Electro-optic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown single crystal on GaAs substrates. Using an argon laser we demonstrate guided-wave electro-optic modulation with voltages which are...

  • Se-rich phase of ZnSe(100) predicted by total-energy calculations. Garcia, Alberto; Northrup, John E. // Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p708 

    Investigates the relative stability of zinc selenide surface reconstructions using first-principles total energy calculations. Stability of c(2x2) structure in the zinc-rich limit; Surface adoption of a (2x1) selenium-dimer phase; Growth rates in atomic layer epitaxy and migration enhanced...

  • Photoassisted organometallic vapor-phase epitaxy of ZnSe: An ab initio molecular orbital study. Nakano, Takashi; Hirano, Tsuneo // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p251 

    Focuses on a study that determined the photoassisted organometallic vapor-phase epitaxy of zinc selenide. Photon irradiation effect on the surface reactions of source gas molecules; Calculation of the vertical photoexcitation energies for source gas molecules; Geometries of adsorbed source gas...

  • Gas-source molecular beam epitaxy of ZnSe using elemental Zn and hydrogen selenide. Ohtsuka, Takeo; Horie, Kayoko; Akiyama, Naoki; Yao, Takafumi // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6006 

    Deals with a study which examined the growth of unintentionally doped zinc selenide by gas-source molecular beam epitaxy using zinc and thermally cracked hydrogen selenide. Electrical and optical properties of zinc selenide epilayers; Experimental procedures; Growth rate of zinc selenide epilayers.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics