Interferometric measurement of the pressure-enhanced crystallization rate of amorphous Si

Lu, G. Q.; Nygren, E.; Aziz, M. J.; Turnbull, D.; White, C. W.
June 1989
Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2583
Academic Journal
We have measured the pressure dependence of the solid phase epitaxial growth rate of self-implanted Si (100) by using the in situ time-resolved interferometric technique in a high-temperature and high-pressure diamond anvil cell. With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed provides a uniform temperature across the sample. At temperatures in the range of 530–550 °C and pressures up to 3.2 GPa (32 kbar), the growth rate is enhanced by up to a factor of 5 over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately -3.3 cm3/mole (-28% of the atomic volume). These results show a significantly weaker pressure dependence than does the previous work of Nygren et al. [Appl. Phys. Lett. 47, 232 (1985)], who found an activation volume of -8.7 cm3/mole. The implication of this measurement for the nature of the defects responsible for crystal growth is discussed.


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