TITLE

Improvements of electrical and optical properties of GaAs by substrate bias application during electron-cyclotron-resonance plasma-excited molecular beam epitaxy

AUTHOR(S)
Kondo, Naoto; Nanishi, Yasushi
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2419
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical and optical properties of GaAs layers are improved by applying substrate bias during electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). The highest mobility obtained without substrate bias is 4500 cm2 V-1 s-1. By applying positive bias, the mobility of the grown layer is increased to as high as 6800 cm2 V-1 s-1. Intense photoluminescence spectra comparable to that of a high quality MBE-grown layer are also observed. The suppression of high-energy ion impingement on the growing surface plays an important role in obtaining high quality crystal.
ACCESSION #
9831604

 

Related Articles

  • Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001). Wan, J.; Jin, G. L.; Jiang, Z. M.; Luo, Y. H.; Liu, J. L.; Wang, Kang L. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1763 

    Temperature- and excitation-power-dependent photoluminescence measurements were carried out for the multilayer structure of Ge islands grown on a Si(001) substrate by gas-source molecular-beam epitaxy. When the excitation power increases from 10 to 400 mW, the photoluminescence peak from the Ge...

  • Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped Hg0.8Cd0.2Te on (100) Cd0.96Zn0.04Te. He, L.; Becker, C. R.; Bicknell-Tassius, R. N.; Scholl, S.; Landwehr, G. // Journal of Applied Physics;4/1/1993, Vol. 73 Issue 7, p3305 

    Investigates the structural and electrical properties of (100) Hg[sub1-x]Cd[subx]Te epilayers grown by molecular beam epitaxy for Hg/Te flux ratios. Effects of Hg flux on pyramidal hillock density; Approach in carrying out epitaxial growth; Influence of the Hg/Te flux ratio during growth on the...

  • Observation of boron-related photoluminescence in GaAs layers grown by molecular beam epitaxy. Brierley, Steven K.; Hendriks, Henry T. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p812 

    Examines the photoluminescence of boron-doped gallium arsenide (GaAs) films grown by molecular beam epitaxy. Presence of boron-related peaks in the spectra; Identification of double acceptor in GaAs films; Determination of energy gap and activation energies.

  • Optimization of the growth parameters for the molecular-beam epitaxial growth of strained.... Emeny, M.T.; Skolnick, M.S. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p824 

    Examines the optical properties of indium gallium arsenide/aluminum gallium arsenide quantum well structures grown by molecular beam epitaxy. Optimization of the growth parameters; Details on the photoluminescence linewidths; Reduction of aluminum surface mobility.

  • Si Incorporation in InP Nanowires Grownby Au-Assisted Molecular Beam Epitaxy. Rigutti, Lorenzo; Bugallo, Andres De Luna; Tchernycheva, Maria; Jacopin, Gwenole; Julien, François H.; Cirlin, George; Patriarche, Gilles; Lucot, Damien; Travers, Laurent; Harmand, Jean-Christophe // Journal of Nanomaterials;2009, Special section p1 

    We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire...

  • Growth kinetics of Ge crystals on silicon oxide by nanoscale silicon seed induced lateral epitaxy. Cammilleri, V. D.; Yam, V.; Fossard, F.; Renard, C.; Bouchier, D.; Fazzini, P. F.; Hÿtch, M. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 9, p093512 

    In this paper, we present our studies on the growth kinetics of Ge crystals on silicon oxide by nanoscale seed induced lateral epitaxy. We propose a simple and reliable method based on standard local oxidation of silicon technique for creating nanoscale silicon seeds at the edge of thermally...

  • Ordinary Electromagnetic Waves in Optically Biaxial Crystals. Alshits, V. I.; Lyubimov, V. N. // Crystallography Reports;Mar2001, Vol. 46 Issue 2, p296 

    It is shown that the so-called ordinary electromagnetic waves (the waves whose group velocity is parallel to the wave normal) cannot propagate outside the planes parallel to the principal planes of the permittivity tensor in transparent optically biaxial crystals. For each of the three such...

  • Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands. Kondratenko, S. V.; Vakulenko, O. V.; Kozyrev, Yu. N.; Rubezhanska, M. Yu.; Naumovets, A. G.; Nikolenko, A. S.; Lysenko, V. S.; Strelchuk, V. V.; Teichert, C. // Journal of Materials Science;Sep2011, Vol. 46 Issue 17, p5737 

    Interband optical transitions in multilayer heterostructures with SiGe nanoislands were investigated using photocurrent spectroscopy and photo-emf. The n- p heterostructures containing Ge nanoislands in the area of the potential barrier were prepared by molecular-beam epitaxy at the temperature...

  • Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon. Heo, Junseok; Guo, Wei; Bhattacharya, Pallab // Applied Physics Letters;1/10/2011, Vol. 98 Issue 2, p021110 

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density (∼108 cm-2) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics