TITLE

Novel low-power optical nonlinearity in semiconductor quantum well electro-optic effect devices

AUTHOR(S)
Weber, Ch.; Schlaad, K.-H.; Klingshirn, C.; Hoof, C. v.; Borghs, G.; Weimann, G.; Schlapp, W.; Nickel, H.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2432
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a new type of GaAs/AlGaAs electro-optic effect device which offers a built-in optical nonlinearity at extremely low power operation working in the pW to μW regime. The device consists of semitransparent metal electrodes evaporated directly onto the undoped AlGaAs cladding layers of a multiple quantum well structure. We briefly characterize the optical nonlinearity which is based on the quantum-confined Stark effect and discuss the underlying physical mechanism which relies on the suppression of the internal electric fields of the biased sample. The use of such structures is proposed especially for applications as possible low-power and low-cost optical bistable switch.
ACCESSION #
9831588

 

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