Single-crystal germanium grown on (1102) sapphire by molecular beam epitaxy

Godbey, D. J.; Qadri, S. B.; Twigg, M. E.; Richmond, E. D.
June 1989
Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2449
Academic Journal
Crystalline germanium films have been successfully grown on the (1102) sapphire surface using molecular beam epitaxy. Growth at temperatures above 700 °C and after preannealing the sapphire substrates above 1100 °C resulted in germanium films with a (110) orientation. A 500 nm germanium film grown at 800 °C after preannealing the sapphire substrate at 1400 °C gave an x-ray rocking curve width that measured 317 arcsec at half maximum for the (220) reflection.


Related Articles

  • Stress reduction and doping efficiency in B- and Ge-doped silicon molecular beam epitaxy films. Hirayama, Hiroyuki; Tatsumi, Toru; Aizaki, Naoaki // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1335 

    Lattice defects in boron highly doped silicon molecular beam epitaxy films (B:2×1020 cm-3) were reduced by a simultaneous doping of germanium and boron. The defect reduction mechanism was investigated with surface defect observation, x-ray diffraction, and Raman spectroscopy. The growth rate...

  • Strain relief of metastable GeSi layers on Si(100). Bai, G.; Nicolet, M.-A.; Chern, C. H.; Wang, K. L. // Journal of Applied Physics;5/1/1994, Vol. 75 Issue 9, p4475 

    Presents information on a study which investigated the growth of highly metastable pseudomorphic Ge[sun 0.3]Si[sub 0.7] layers on silicon (100) by molecular-beam epitaxy.

  • Ge growth on Si using atomic hydrogen as a surfactant. Sakai, Akira; Tatsumi, Toru // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p52 

    Examines the growth of germanium (Ge) thin films on silicon substrates using atomic hydrogen (H) as a surfactant. Suppression of Ge island formation; Alteration of film growth in molecular beam epitaxy; Use of reflection high-energy electron diffraction to monitor surface structure growth;...

  • Epitaxial growth and characterization of Ge1-xCx alloys on Si(100). Krishnamurthy, M.; Drucker, J. S.; Challa, A. // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7070 

    Presents a study on the initial stages of molecular beam epitaxial growth of Ge[sub1-x]C[subx] on Si(100) using both in situ surface analytical techniques and ex situ electron microscopy. Cocentrations of the films studied; Details on silicon-germanium alloys; Experimental technique; Results;...

  • Growth of HgCdTe and CdTe(331)B on germanium substrate by molecular beam epitaxy. Zanatta, J.P.; Duvaut, P. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2984 

    Examines the growth of mercury cadmium telluride and cadmium telluride (CdTe)(331)boron films on germanium (Ge) substrate by molecular beam epitaxy. Reason for the selection of Ge as substrate; Characteristics of the grown samples; Use of transmission electron microscopy; Display of the misfit...

  • Strain relaxation of Si/Ge multilayers: Coherent islands formation and their evolution as a function of the strain. Carlino, E.; Giannini, C.; Gerardi, C.; Tapfer, L.; Mäder, K. A.; von Känel, H. // Journal of Applied Physics;2/1/1996, Vol. 79 Issue 3, p1441 

    Presents information on a study which analyzed silicon/germanium multilayers grown by molecular beam epitaxy. Experimental procedure; Results; Discussion.

  • Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si[sub 1 � ][sub x]Ge[sub x] Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources. Orlov, L. K.; Ivina, N. L. // Semiconductors;Feb2002, Vol. 36 Issue 2, p191 

    The coefficients of segregation of germanium atoms were measured for the Si[sub 1-x]Ge[sub x] system grown by molecular-beam epitaxy with combined Si-GeH[sub 4] sources under the conditions of efficient filling of surface bonds by the products of the decomposition of hydrides. In their turn,...

  • Low-temperature growth of Ge on Si(100). Eaglesham, D.J.; Cerullo, M. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2276 

    Studies heteroepitaxial molecular beam epitaxial growth of germanium on silicon at low temperatures. Low-temperature limit to growth; Suppression of island formation; Planar growth at all temperatures; Occurrence of strain relaxation of the planar epilayers.

  • Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening. Bramblett, T. R.; Lu, Q.; Lee, N.-E.; Taylor, N.; Hasan, M.-A.; Greene, J. E. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1504 

    Reports on the first growth kinetics and microstructural investigations of germanium (Ge) gas-source molecular beam epitaxy from digermane. Introduction to Ge; Experimental procedure; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics