TITLE

Selected area growth of GaAs by laser-induced pyrolysis of adsorbed triethylgallium

AUTHOR(S)
Donnelly, V. M.; McCaulley, J. A.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2458
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report selected area growth of GaAs by XeF excimer laser induced pyrolysis of triethylgallium (TEGa) adsorbed on GaAs(100). TEGa dissociatively chemisorbs at 400 °C to form a stable layer which decomposes further under laser irradiation to liberate hydrocarbon products. The Ga left behind on the surface reacts with As2 and As4 (formed by pyrolysis of trimethylarsine or triethylarsine in a side tube) to grow GaAs in irradiated areas. Patterned films with feature sizes of ∼70 μm (limited by the projection system) were grown by this method. Interference between the incident beam and light scattered along the surface causes a substructure of parallel lines, with a spacing about equal to the laser wavelength (0.35 μm), to form on the features. This indicates that the ultimate spatial resolution is comparable to that predicted by thermal diffusion calculations (∼0.3 μm).
ACCESSION #
9831572

 

Related Articles

  • Excimer laser-assisted metalorganic vapor phase epitaxy of CdTe on GaAs. Zinck, J. J.; Brewer, P. D.; Jensen, J. E.; Olson, G. L.; Tutt, L. W. // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1434 

    We have successfully grown CdTe (111) on GaAs (100) at 165 °C using a 248 nm excimer laser to photodissociate dimethylcadmium and diethyltellurium in the gas phase. Good crystalline quality of the layers is confirmed by x-ray diffractometry. Growth rates up to 2 μm/h have been recorded in...

  • Low-temperature (600–650 °C) silicon epitaxy by excimer laser-assisted chemical vapor deposition. Yamada, A.; Satoh, A.; Konagai, M.; Takahashi, K. // Journal of Applied Physics;6/1/1989, Vol. 65 Issue 11, p4268 

    Presents a study which reported silicon (Si) epitaxial growth using an excimer laser to reduce the growth temperature. Description of the schematic experimental setup used for laser-chemical vapor deposition (CVD); Dependence of the growth rate on the substrate temperature; Variation of...

  • Large crystalline grain growth using current-induced Joule heating. Sameshima, T.; Ozaki, K.; Andoh, N. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 1, p1 

    Abstract. Electrical-current-induced Joule heating was applied to crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. 3-micro s-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with 28-ns-pulsed excimer...

  • Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors. Yixin Li; Antonuk, Larry E.; El-Mohri, Youcef; Qihua Zhao; Hong Du; Sawant, Amit; Yi Wang // Journal of Applied Physics;3/15/2006, Vol. 99 Issue 6, p064501 

    The effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-annealed polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been examined at dose levels up to 1000 Gy. Parameters including mobility, threshold voltage, subthreshold swing, and leakage...

  • Crystal growth of phosphor perovskite titanate thin films under excimer laser irradiation. Nakajima, Tomohiko; Tsuchiya, Tetsuo; Kumagai, Toshiya // Applied Physics A: Materials Science & Processing;Oct2008, Vol. 93 Issue 1, p51 

    Ca0.997Pr0.002TiO3 (CPTO) thin films that show strong red luminescence were successfully prepared by means of an excimer laser assisted metal organic deposition (ELAMOD) process with a KrF laser at a fluence of 100 mJ/cm2, a pulse duration of 26 ns, and a repetition rate of 20 Hz at 100°C in...

  • Memory characteristics of laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with location-controlled grain boundary perpendicular to the channel. Lee, I-Che; Tsai, Chun-Chien; Kuo, Hsu-Hang; Yang, Po-Yu; Wang, Chao-Lung; Cheng, Huang-Chung // Applied Physics Letters;6/11/2012, Vol. 100 Issue 24, p244103 

    An excimer-laser-crystallized polycrystalline-silicon silicon-oxide-nitride-oxide-silicon thin-film transistor with recessed-channel structure has been designed to achieve only one grain boundary with a protrusion perpendicular to the channel for investigating the grain boundary location effects...

  • Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing. Cheng, Jian-Gong; Wang, Junling; Dechakupt, Tanawadee; Trolier-McKinstry, Susan // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p232905 

    The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the...

  • A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor. Kang, Myung-Koo; Kim, Si Joon; Kim, Hyun Jae // Applied Physics Letters;11/15/2010, Vol. 97 Issue 20, p202103 

    Sequential lateral solidification (SLS) thin-film transistors (TFTs) offer higher performance than conventional excimer laser-annealed TFTs. However, their performance has an anisotropy originating from the polycrystalline silicon (p-Si) microstructure. The properties of TFTs with channel...

  • Doctor questions summit's sincerity. Robin, Jeffrey B. // Ophthalmology Times;1/22/96, Vol. 21 Issue 3, p4 

    Focuses on the article which came from the summit `Diagnostic's Center of Excellence' by Ron Herskowitz that deals with competition with doctors who have excimer laser. Views highlighted.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics