TITLE

Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy

AUTHOR(S)
Glade, M.; Grützmacher, D.; Meyer, R.; Woelk, E. G.; Balk, P.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2411
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the activation by post-deposition annealing of Zn and Cd acceptors incorporated in InP during epitaxial growth using metalorganic vapor phase epitaxy. Growth was carried out at 20 mbar and atmospheric pressure for Zn- and Cd-doped samples, respectively, using TMI, PH3, DEZn, and DMCd as sources. Post-epitaxial annealing in a N2 atmosphere at temperatures in the range of 370–470 °C leads to complete activation of the acceptors. This process is strongly temperature dependent and a distinct effect of a GaInAs overlayer was observed. The activation energy is the same for Zn- and Cd-doped samples. It is suggested that the diffusion of vacancies plays a determining role in activating the dopant.
ACCESSION #
9831537

 

Related Articles

  • Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy. Xiaohong Tang; Jinghua Zhao; Mee Koy Chin; Ting Mei; Zongyou Yin; Sentosa Deny; An Yan Du // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p181906 

    Spontaneous CuPt ordering is observed in AlxIn1-xP layers grown by metal-organic vapor-phase epitaxy in pure nitrogen ambient with tertiarybutylphosphine as phosphorus precursor. Changes of the degree of ordering of the AlxIn1-xP epilayer versus annealing temperature have been investigated by...

  • High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy. Rao, S.; Shintri, S.; Markunas, J.; Jacobs, R.; Bhat, I. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1790 

    High-quality (211)B CdTe buffer layers are required during HgCdTe heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as...

  • Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect. Chen, Z.; Pei, Y.; Newman, S.; Brown, D.; Chung, R.; Keller, S.; DenBaars, S. P.; Nakamura, S.; Mishra, U. K. // Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p171117 

    Field-effect transistors (FETs) were grown on both GaN and AlGaN buffers. X-ray reciprocal space mapping and ω-2θ scans showed that the AlGaN barriers grown on these two buffers had different Al compositions and growth rates, which was attributed to the compositional pulling effect....

  • Epitaxial Hg1-xCdxTe growth by low-temperature metalorganic chemical vapor deposition. Lu, P.-Y.; Wang, C.-H.; Williams, L. M.; Chu, S. N. G.; Stiles, C. M. // Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1372 

    We report the first low-temperature metalorganic chemical vapor deposition of Hg1-xCdxTe using a thermal precracking technique. The precracking technique enables one to grow epitaxial Hg1-xCdxTe on CdTe substrates at temperatures as low as 225 °C. The growth rate is 1–2 μm/h. The...

  • Growth of III�N materials and devices by metalorganic chemical vapor deposition. Dupuis, R. D.; Grudowski, P. A.; Eiting, C. J.; Park, J. // Semiconductors;Sep99, Vol. 33 Issue 9, p965 

    The characteristics of III-V nitride semiconductor epitaxial layers grown by metalorganic chemical vapor deposition are of interest for the realization of many technologically important devices. This paper will review heteroepitaxial growth on (0001) sapphire substrates as well as the...

  • Electrical properties of semiconductive Nb-doped BaTiO[sub 3] thin films prepared by metal–organic chemical-vapor deposition. Nagano, Daisuke; Funakubo, Hiroshi; Shinozaki, Kazuo; Mizutani, Nobuyasu // Applied Physics Letters;4/20/1998, Vol. 72 Issue 16 

    Epitaxially grown semiconductive Nb-doped BaTiO[sub 3] thin films with low electrical resistivity similar to that of the bulk single crystal were prepared by metal–organic chemical-vapor deposition. Thin films with 1.5–7.5 at. % Nb content showed n-type semiconductor character. The...

  • Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1-xSbx. Jou, M. J.; Cherng, Y. T.; Jen, H. R.; Stringfellow, G. B. // Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p549 

    The III/V semiconductor alloy GaP1-xSbx has been grown for the first time. This alloy, which has a large miscibility gap at the growth temperatures of 530–600 °C, has been grown by organometallic vapor phase epitaxy at atmospheric pressure. In spite of the miscibility gap, which is...

  • Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by... Snyder, D.W.; Mahajan, S.; Ko, E.I.; Sides, P.J. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p848 

    Investigates the effect of substrate misorientation on surface morphology of CdTe homoepitaxial films deposited by organometallic vapor phase epitaxy (OMVPE). Effect of misorientation of CdTe(100) substrates on formation of hillocks in CdTe films deposited by OMVPE; Double-crystal x-ray rocking...

  • Effects of substrate misorientation and growth rate on ordering in GaInP. Su, L. C.; Ho, I. H.; Stringfellow, G. B. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p5135 

    Investigates the effects of both growth rate and the angle of substrate misorientation on ordering, particularly the domain size, shape and the degree of order. Information on the atomic-scale ordering; Description of an experiment in which the GaInP epitaxial layers were grown by...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics