Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing

Katz, A.; Dautremont-Smith, W. C.; Chu, S. N. G.; Thomas, P. M.; Koszi, L. A.; Lee, J. W.; Riggs, V. G.; Brown, R. L.; Napholtz, S. G.; Zilko, J. L.; Lahav, A.
June 1989
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2306
Academic Journal
Very low resistance nonalloyed ohmic contacts of Pt/Ti to 1.5×1019 cm-3 Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. These contacts were ohmic as deposited with a specific contact resistance value of 3.0×10-4 Ω cm2. Cross-sectional transmission electron microscopy showed a very limited interfacial reacted layer (20 nm thick) between the Ti and the InGaAs as a result of heating at 450 °C for 30 s. The interfacial layer contained mostly InAs and a small portion of other five binary phases. Heating at 500 °C or higher temperatures resulted in an extensive interaction and degradation of the contact. The contact formed at 450 °C, 30 s exhibited tensile stress of 5.6×109 dyne cm-2 at the Ti/Pt bilayer, but the metal adhesion remained strong. Rapid thermal processing at 450 °C for 30 s decreased the specific contact resistance to a minimum with an extremely low value of 3.4×10-8 Ω cm2 (0.08 Ω mm), which is very close to the theoretical prediction.


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