Fabrication and characterization of lateral InP/InGaAsP heterojunctions and bipolar transistors

Yoo, H-J.; Hayes, J. R.; Caneau, C.; Bhat, R.; Koza, M.
June 1989
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2318
Academic Journal
We have investigated the fabrication of lateral InP/InGaAsP heterojunctions using both wet chemical and in situ melt-back etching and regrowth to form the device junctions. The current/voltage characteristics of the melt-back-etched and regrown heterojunctions exhibit ideality factors as low as 1.25. In addition, we have fabricated lateral heterojunction bipolar transistors with 2 μm base widths which exhibit a current gain of 6. These results indicate that regrown heterojunctions have adequate injection efficiency to form the active region of devices.


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