TITLE

Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior

AUTHOR(S)
Bestwick, T. D.; Oehrlein, G. S.; Angell, D.; Jones, P. L.; Corbett, J. W.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2321
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion of oxygen is increased above 30% the reaction layer becomes thicker and contains mainly fluorine and oxygen, and the silicon etch rate decreases simultaneously.
ACCESSION #
9831511

 

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