TITLE

Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy

AUTHOR(S)
Jalali, B.; Nottenburg, R. N.; Chen, Y. K.; Levi, A. F. J.; Sivco, D.; Cho, A. Y.; Humphrey, D. A.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2333
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate near-ideal lateral scaling in abrupt junction Al0.48In0.52As /In0.53Ga0.47As heterostructure bipolar transistors. Current gain β=162 and 122 has been realized in transistors with emitter stripe width of 50 and 0.6 μm, respectively. The excellent lateral scaling occurs because the 0.5 eV emitter injection energy results in nonequilibrium vertical electron transport in the thin (700 Å) InGaAs base.
ACCESSION #
9831501

 

Related Articles

  • In search of a better DRAM: evolving to floating bodies. Okhonin, Sergui // EDN Europe;Nov2009, Vol. 56 Issue 11, p28 

    The article discusses the use of an intrinsic bipolar transistor results in a superior floating-body-memory design to create dynamic random-access memories (DRAMs). It notes that the major problem for DRAM manufacturers are scaling and leakage which rest fundamentally with the basic...

  • Barrier and recombination effects in the base-emitter junction of heterostructure bipolar transistors. Tiwari, Sandip; Frank, D. J. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p993 

    We show that high current densities with minimal space charge region recombination current can be obtained by a suitable choice of alloy grading parameters and doping of the junction. It is also shown that compositionally graded, but uniformly doped emitter junctions require a minimum doping...

  • Base doping limits in heterostructure bipolar transistors. Jalali, B.; Nottenburg, R. N.; Levi, A. F. J.; Hamm, R. A.; Panish, M. B.; Sivco, D.; Cho, A. Y. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1460 

    Heterostructure bipolar transistors are used to experimentally determine band offsets in lattice-matched In0.53Ga0.47As devices. Valence-band offsets of ΔEV=0.24 eV for Al0.48In0.52As/In0.53Ga0.47As and ΔEV=0.34 eV for InP/In0.53Ga0.47As are measured. Because of band filling in the base,...

  • Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy. Hamm, R.A.; Feygenson, A. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p592 

    Examines the growth of heterostructure bipolar transistors by selective area epitaxy (SAE). Detection of the SAE grown multilayer by scanning electron micrograph; Optimization of chloride molecule etching to improve the quality of the regrown junction; Effect of argon ion sputtering on grown...

  • Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter.... Wen-Chau Liu; Der-Feng Guo // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1441 

    Fabricates gallium arsenide/aluminum gallium arsenide heterostructure-emitter bipolar transistor (HEBT). Effect of double (D) HEBT of reducing the offset voltage; Reduction of the DHEBT by the large spike of the base-collector homojunction; Use of the emitter edge-thinning technique for the...

  • Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar... McAlister, S.P.; McKinnon, W.R.; Driad, R.; Renaud, A. P. // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p5231 

    Discusses the effect on the dc and rf transport characteristics of dipole doping at the collector heterojunction in an InP/InGaAs double heterojunction bipolar transistor. Use of dipole doping at the interface; Improvement of frequency performance; Switching characteristics of devices with...

  • Heterostructure bipolar transistor with enhanced forward diffusion of minority carriers. Luryi, Serge; Grinberg, Anatoly A. // Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1537 

    Examines the minority carrier transport of the heterostructure bipolar transistor. Comparison between total base propagation and diffusive delays; Effect of step length on the magnitude of the base transport factor; Details on the stringent trade-off between the requirements of low base...

  • Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor. Jung-Hui Tsai // Applied Physics Letters;10/25/1999, Vol. 75 Issue 17, p2668 

    Describes the fabrication and demonstration of an AlGaAs/GaAs/InGaAs resonant-tunneling heterostructure-emitter bipolar transistor with negative-differential-resistance (DNR) behavior. Device performances obtained at room temperature; Double-barrier-like resonant-tunneling effect's generation...

  • The study of emitter thickness effect on the heterostructure emitter bipolar transistors. Chen, H. R.; Lee, C. P.; Chang, C. Y.; Tsang, J. S.; Tsai, K. L. // Journal of Applied Physics;7/15/1993, Vol. 74 Issue 2, p1398 

    Deals with a study which grew and analyzed AlGaAs/GaAs heterostructure emitter bipolar transistors. Experimental details; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics