Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy

Jalali, B.; Nottenburg, R. N.; Chen, Y. K.; Levi, A. F. J.; Sivco, D.; Cho, A. Y.; Humphrey, D. A.
June 1989
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2333
Academic Journal
We demonstrate near-ideal lateral scaling in abrupt junction Al0.48In0.52As /In0.53Ga0.47As heterostructure bipolar transistors. Current gain β=162 and 122 has been realized in transistors with emitter stripe width of 50 and 0.6 μm, respectively. The excellent lateral scaling occurs because the 0.5 eV emitter injection energy results in nonequilibrium vertical electron transport in the thin (700 Å) InGaAs base.


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