TITLE

Ion beam induced epitaxy of deposited amorphous Si and Si-Ge films

AUTHOR(S)
Yu, A. J.; Mayer, J. W.; Eaglesham, D. J.; Poate, J. M.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2342
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The epitaxial recrystallization of amorphous electron beam deposited silicon and silicon-germanium layers on <100> silicon substrates was induced by a 2.5 MeV Ar beam irradiation in the temperature range of 200–400 °C. Even in films with bulk oxygen concentration of 0.5 at. %, layer-by-layer regrowth was observed with an order of magnitude reduction in growth rate when compared to clean, implanted amorphous silicon. Irradiation of codeposited Si-Ge amorphous layers results in the layer-by-layer regrowth of a Si88Ge12 alloy. Ion beam assisted epitaxy of Si and Si-Ge was found to be sensitive to interfacial cleanliness, but layer-by-layer regrowth was observed for samples that did not demonstrate regrowth under conventional furnace annealing.
ACCESSION #
9831496

 

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