Ion beam induced epitaxy of deposited amorphous Si and Si-Ge films

Yu, A. J.; Mayer, J. W.; Eaglesham, D. J.; Poate, J. M.
June 1989
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2342
Academic Journal
The epitaxial recrystallization of amorphous electron beam deposited silicon and silicon-germanium layers on <100> silicon substrates was induced by a 2.5 MeV Ar beam irradiation in the temperature range of 200–400 °C. Even in films with bulk oxygen concentration of 0.5 at. %, layer-by-layer regrowth was observed with an order of magnitude reduction in growth rate when compared to clean, implanted amorphous silicon. Irradiation of codeposited Si-Ge amorphous layers results in the layer-by-layer regrowth of a Si88Ge12 alloy. Ion beam assisted epitaxy of Si and Si-Ge was found to be sensitive to interfacial cleanliness, but layer-by-layer regrowth was observed for samples that did not demonstrate regrowth under conventional furnace annealing.


Related Articles

  • Study on further reducing the epitaxial silicon temperature down to 250 °C in low-energy bias sputtering. Ohmi, Tadahiro; Hashimoto, Keiichi; Morita, Makoto; Shibata, Tadashi // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2062 

    Examines how to reduce the epitaxial silicon growth temperature below 300 °C. Range of ion energy used in the processes; Direction for low-temperature epitaxy; Information on the necessity for high-precision control of ion bombardment energy; Effect of cleanliness in the processing...

  • Ion-beam doping of GaAs with low-energy (100 eV) C+ using combined ion-beam and molecular-beam epitaxy. Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p146 

    Describes a combined ion-beam and molecular-beam epitaxy system. Significance of electronic thin film formation using hypothermal ion beams; Prerequisite for the characterization of the incorporation behavior of various impurities; Details of the development of the CIBMBE system.

  • Aligned and twinned orientations in epitaxial CoSi2 layers. Vanderstraeten, H.; Bruynseraede, Y.; Wu, M. F.; Vantomme, A.; Langouche, G.; Phillips, J. M. // Applied Physics Letters;7/9/1990, Vol. 57 Issue 2, p135 

    Heteroepitaxial CoSi2 layers have been made by ion beam synthesis and solid phase epitaxy in Si<111> substrates. Using the x-ray rocking curves of the asymmetric (331) reflections we are able to determine very accurately the relative amount of aligned (type A) and twinned (type B) CoSi2 in...

  • Low-temperature homoepitaxial film growth of Si by reactive ion beam deposition. Yamada, Hiroshi; Torii, Yasuhiro // Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p702 

    Discusses a study which investigated the homoepitaxial film growth maintaining primary surface structures of silicon substrates using the reactive ion beam deposition method. Evaluation of impurity concentrations in the epitaxial films; Experimental procedures; Results and discussion; Conclusions.

  • Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing. Chen, C. H.; Niu, H.; Yan, D. C.; Hsieh, H. H.; Lee, C. P.; Chi, C. C. // Applied Physics Letters;6/11/2012, Vol. 100 Issue 24, p242412 

    Ferromagnetic GeMn was prepared by Mn implantation followed by ion beam-induced epitaxial crystallization annealing. The damage caused by Mn implantation was repaired by subsequent helium ion irradiation. Various structural analyses were performed and Mn ions were found to incorporate uniformly...

  • Hyperthermal ion beam system optimized for studying the effects of kinetic energy on thin-film growth. Pomeroy, J. M.; Couture, A. J.; Murty, M. V. R.; Butler, E. N.; Cooper, B. H. // Review of Scientific Instruments;Nov2002, Vol. 73 Issue 11, p3846 

    A hyperthermal and low-energy ion beam (10-1000 eV) optimized for studying morphological trends in epitaxial metal thin films as a function of atomic kinetic energy has been built and characterized. The ion beam line produces metal and inert gas ions and is specially designed to produce up to...

  • Magnetic properties of Fe films and Fe/Si/Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy. Damm, Thorsten; Buchmeier, Matthias; Schindler, Alexandra; Bürgler, Daniel E.; Grünberg, Peter; Schneider, Claus M. // Journal of Applied Physics;5/1/2006, Vol. 99 Issue 9, p093905 

    We grow monocrystalline Fe(001) films and Fe/Si/Fe(001) trilayers by ion-beam sputter epitaxy on GaAs(001) and MgO(001) substrates. Ion-beam sputtering parameters such as substrate presputtering time, substrate temperature, beam voltage, and target angle are optimized for 10-nm-thick Fe(001)...

  • Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition. Krause, Matthias; Mücklich, Arndt; Oates, Thomas W. H.; Zschornak, Matthias; Wintz, Sebastian; Luis Endrino, Jose; Baehtz, Carsten; Shalimov, Artem; Gemming, Sibylle; Abrasonis, Gintautas // Applied Physics Letters;7/30/2012, Vol. 101 Issue 5, p053112 

    The influence of assisting low-energy (∼50-100 eV) ion irradiation effects on the morphology of C:Ni (∼15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic...

  • Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancement. Donahue, T. J.; Reif, R. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2757 

    Describes a system and a procedure using chemical vapor deposition of silane for depositing silicon epitaxial films both with and without plasma enhancement. Use of silicon epitaxy in integrated circuit technology; Mechanisms that caused the transfer of dopants; Effects of ion bombardment on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics