Control of Al/GaAs Schottky barrier height by high Ce doping

Hirose, Kazuyuki; Foxman, Ethan
June 1989
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2347
Academic Journal
Al/GaAs Schottky barrier contacts are fabricated with different Ce doping concentrations in the last 100 Ã… of GaAs before the metal/GaAs interface. Both n- and p-type Schottky barrier heights (SBHs) are measured by current-voltage and capacitance-voltage methods. The n-type SBH is found to decrease with the increasing Ce doping concentration, and the p-type SBH is found to increase to a lesser degree. These SBH changes are considered to be due to energy gap narrowing at the GaAs surface caused by high Ce doping.


Related Articles

  • Capacitance decrease due to stress in a Cu-doped, n-type Si Schottky diode. Tōyama, Naotake // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p892 

    In Au n-type Si Schottky diodes heavily doped with copper, a remarkable decrease in the depletion layer capacitance is frequently observed by applying stress. It was found that the capacitance decrease due to stress was attributed to the change of the copper substitutional species (Cu[sub I])...

  • Effects of low-level boron doping on the photocurrent of amorphous silicon Schottky photodiodes. Kakinuma, H.; Kasuya, Y.; Sakamoto, M.; Shibata, S. // Journal of Applied Physics;3/15/1989, Vol. 65 Issue 6, p2307 

    Examines effects of low-level boron doping on the photocurrent of amorphous silicon Schottky photodiodes. Photocurrent-electric field characteristics; Dependence of the primary photocurrent on the applied electric field; Application of amorphous silicon Schottky photodiodes.

  • Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes. Maleev, N. A.; Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Ustinov, V. M.; Volkov, V. V.; Kokorev, M. F. // Semiconductors;Mar1999, Vol. 33 Issue 3, p345 

    Diodes with a planar-doped potential barrier are devices with charge transfer by majority carriers for which the height of the potential barrier and the shape of the current-voltage characteristics can be controlled by means of a definite combination of layers during the growth of the epitaxial...

  • Mechanism of Reverse Current in the Al/p-InP Schottky Diodes. Pipinys, P. A.; Rimeika, A. K.; Lapeika, V. A.; Pipiniene, A. V. // Semiconductors;Feb2001, Vol. 35 Issue 2, p181 

    Reverse current-voltage characteristics of the Al/p-InP Schottky diodes based on Zn-doped InP epilayers were measured in relation to bias and temperature. Temperature dependence of reverse current is characterized by the activation energies of 0.75 and 0.51 eV in the high-temperature region and...

  • Contact resistance measurements on p-type 6H-SiC. Crofton, J.; Barnes, P.A.; Williams, J.R.; Edmond, J.A. // Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p384 

    Examines the contact resistance measurements for aluminum-titanium ohmic contacts to 6H-SiC as a function of epitaxial doping. Use of circular transmission line method to measure specific contact resistance; Determination of the Schottky barrier image force lowering of the; Comparison between...

  • Large Schottky barriers for Ni/p-GaN contacts. Shiojima, Kenji; Sugahara, Tomoya; Sakai, Shiro // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p1936 

    Measures large Schottky barriers for nickel (Ni) contacts formed on low magnesium (Mg)-doped p-gallium nitride (GaN). Examination of low-Mg doping to improve leaky Schottky characteristics; Atomically flat surfaces; Low dislocation density.

  • 1/F Noise In Si Delta-Doped Schottky Diodes. Yakimov, Arkady V.; Klyuev, Alexey V.; Shmelev, Evgeny I.; Murel, Arkady V.; Shashkin, Vladimir I. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p225 

    The model of Schottky diode with δ-doping is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Ileak are taken into account. Parameters of the...

  • Diagnostics of low-barrier Schottky diodes with near-surface δ-doping. Shashkin, V.; Murel’, A. // Semiconductors;Apr2008, Vol. 42 Issue 4, p490 

    To find the parameters of low-barrier Schottky diodes, a diagnostics technique based on an analysis of the dependence of the differential resistance of a diode with a Mott barrier and near-surface δ-shaped doping is developed. It is shown that a complete description of the current-voltage...

  • Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation. Feste, S. F.; Knoch, J.; Buca, D.; Zhao, Q. T.; Breuer, U.; Mantl, S. // Journal of Applied Physics;Feb2010, Vol. 107 Issue 4, p044510 

    We present a systematic analysis of arsenic dopant segregation during nickel silicide formation. The slopes and concentrations of the arsenic dopant profiles at the NiSi/Si interface have been studied as a function of implantation energy, implantation dose, and NiSi thickness. Silicidation...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics