Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures

Fujita, J.; Tatsumi, T.; Yoshitake, T.; Igarashi, H.
June 1989
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2364
Academic Journal
Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 Ã… Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 Ã… (which correspond to bulk 24, 30, and 36 Ã… phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 Ã… showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.


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