Self-deformed and hysteretic photocurrent spectra of quantum wells with a load resistor

Tokuda, Yasunori; Kanamoto, Kyozo; Tsukada, Noriaki
June 1989
Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2324
Academic Journal
We report a study of the self-deformation of the photocurrent spectra of a quantum well p-i-n structure connecting with a high series resistor. The observed phenomena are interpreted in terms of the modulation of the internal electric field at the intrinsic quantum well region by the photocurrent itself. Furthermore, it is predicted and demonstrated that bistability of the photocurrent is achieved as a function of the wavelength.


Related Articles

  • Optical transitions in strained In[sub 1-x]Ga[sub x]As[sub y]P[sub 1-y] quantum wells clad by.... Jiang, X.P.; Thiagarajan, P. // Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1689 

    Examines the deformation potential model developed for InGaAs/InP quantum wells and strained quaternary wells. Interpolation of the quaternary material parameters in a plane bound; Calculation of heavy and light hole transition energies; Achievement of the values of compressively strained...

  • Energy and momentum relaxation of two-dimensional electron gas due to near-surface deformation... Pipa, V. I.; Vasko, F. T. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2754 

    Presents information on a study which focused on the calculations of the energy and momentum relaxation rates of electrons within the lowest subband of a quantum well due to deformation scattering. Probability of transitions; Relaxation rates; Regimes of relaxation; Conclusions.

  • Strain dependence of hole mass and optical anisotropy in (110) quantum wells. Peng, L.-H. // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5711 

    Investigates the effects of strain and confinement on the biaxial properties of hole masses. Optical transitions in strained (110) quantum wells; Theory of perturbation and deformation potential; Analytical method in treating band mixing effects; Incorporation of spin-orbital coupling effect;...

  • Calculations for the band lineup of strained InxGa1-xN/GaN quantum wells: Effects of strain on the band offsets. Das, Tapas; Kabi, Sanjib; Biswas, Dipankar // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    Band lineup is one of the most important parameters associated with carrier confinement in heterostructures. Relations for computing the band lineups of InxGa1-xN based heterostructures have been developed. The band positions for InxGa1-xN/GaN heterointerfaces are calculated from the equations...

  • Energy loss rate of hot electrons due to confined acoustic phonon modes in a freestanding quantum well structure. Bhat, J. S.; Nesargi, R. A.; Mulimani, B. G. // Journal of Applied Physics;Aug2009, Vol. 106 Issue 3, p033701 

    The energy loss rate of hot electrons in a semiconducting freestanding quantum well structure, in the presence of zero and finite quantizing magnetic field, is studied using electron temperature model. Electron interaction with confined acoustic phonons via deformation potential coupling...

  • Key scattering mechanisms for holes in strained SiGe/Ge/SiGe square quantum wells. Quang, Doan Nhat; Tung, Nguyen Huyen; Hien, Do Thi; Hai, Tran Thi // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113711 

    We present a theory of the low-temperature transport of holes confined in the Ge strained channel of single-side modulation-doped SiGe/Ge/SiGe square quantum wells (QWs). Besides the well-known scattering mechanisms such as remote impurities and surface roughness, the theory includes misfit...

  • Energy loss rate in Disordered Quantum Well. Tripathi, P.; Ashraf, S. S. Z.; Hasan, S. T.; Sharma, A. C. // AIP Conference Proceedings;2014, Vol. 1591, p1467 

    We report the effect of dynamically screened deformation potential on the electron energy loss rate in disordered semiconductor quantum well. Interaction of confined electrons with bulk acoustic phonons has been considered in the deformation coupling. The study concludes that the dynamically...

  • Role of strain in polarization switching in semipolar InGaN/GaN quantum wells. Yan, Qimin; Rinke, Patrick; Scheffler, Matthias; Van de Walle, Chris G. // Applied Physics Letters;11/1/2010, Vol. 97 Issue 18, p181102 

    The effect of strain on the valence-band structure of [formula] semipolar InGaN grown on GaN substrates is studied. A k·p analysis reveals that anisotropic strain in the c-plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain...

  • Band offsets for pseudomorphic InP/GaAs. Nolte, D. D. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p259 

    Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics