TITLE

Room-temperature pseudomorphic InxGa1-xAs/GaAs quantum well surface-emitting lasers at 0.94–1.0 μm wavelengths

AUTHOR(S)
Huang, K. F.; Tai, K.; Jewell, J. L.; Fischer, R. J.; McCall, S. L.; Cho, A. Y.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2192
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report room-temperature lasing at 0.94–1.002 μm in high-finesse Fabry– Perot resonators with Inx Ga1-x As/GaAs multiple quantum well active layers (x=0.18–0.2). The quantum wells and AlAs/GaAs quarter-wave stack mirrors were epitaxially grown on GaAs substrates. Optically pumping with 0.875 μm, 10 ps pulses yielded a threshold of 15 pJ incident pulse energy. The equivalent threshold current density is about 26 μA/μm2 (2.6 kA/cm2 ), suggesting ultralow thresholds in micrometer-size devices. At the lasing wavelengths the GaAs substrates are essentially transparent allowing the possibility of integrating micro-optic lenslets on the substrate backsides for light collection. Nonlinear optical gating of 1.064 μm light was also achieved in these structures.
ACCESSION #
9831443

 

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