TITLE

Early stages of plasma synthesis of diamond films

AUTHOR(S)
Meilunas, R.; Wong, M. S.; Sheng, K. C.; Chang, R. P. H.; Van Duyne, R. P.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2204
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The early stages of diamond film nucleation and growth in a microwave plasma have been studied in detail as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through Raman spectroscopy and scanning electron microscopy measurements. Using transmission infrared spectroscopy and x-ray diffraction, it is found that a carbide layer is initially formed on the substrate prior to the growth of the diamond film. Furthermore, the final film morphology is also a strong function of the plasma starting condition, the gas composition, and the substrate temperature.
ACCESSION #
9831435

 

Related Articles

  • Growth and field emission properties of multiply twinned diamond films with quintuplet wedges. Wang, W. N.; Fox, N. A.; Davis, T. J.; Richardson, D.; Lynch, G. M.; Steeds, J. W.; Lee, J. S. // Applied Physics Letters;11/4/1996, Vol. 69 Issue 19, p2825 

    A unique microwave plasma chemical vapor deposition (MPCVD) technique was employed to produce multiply twinned diamond films with quintuplet wedges. Biased nucleation, nonbiased growth, and high methane/hydrogen ratio (>=5%) were used to prepare the multiply twinned diamond films. The growth...

  • Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond.... Tae-Yeon Seong; Do-Geun Kim // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3368 

    Examines the bias-enhanced nucleation (BEN) and growth of diamond films by microwave plasma chemical vapor deposition. Use of transmission electron microscopy, transmission electron diffraction, atomic force microscopy and scanning electron microscopy; Epitaxial relations between silicon...

  • Diamond nucleation and growth on TaN2. Wang, Zhiyong; Yao, Jianghong; Han, Li; Chen, Guanghua // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7407 

    Presents information on a study which described the deposition of high quality diamond films on tantalum nitride materials using the microwave plasma chemical vapor deposition technique. Investigation of the structure and quality of the films; Characteristics of the diamond films; Mechanisms...

  • Observation of diamond nanocrystals in carbon films deposited during ion-assisted microwave plasma nucleation pretreatments. McGinnis, Sean P.; Kelly, Michael A.; Hagström, Stig B.; Alvis, Roger L. // Journal of Applied Physics;1/1/1996, Vol. 79 Issue 1, p170 

    Deals with a study which observed the diamond nanocrystals in carbon films deposited by ion-assisted microwave plasma pretreatments for diamond thin films. Discussion on bias-enhanced nucleation and microwave plasma chemical-vapor deposition; Methodology of the study; Results and discussion.

  • Effect of pretreatment process parameters on diamond nucleation on unscratched silicon substrates coated with amorphous carbon films. Feng, Z.; Komvopoulos, K.; Bogy, D. B.; Ager, J. W.; Anders, S.; Anders, A.; Wang, Z.; Brown, I. G. // Journal of Applied Physics;1/1/1996, Vol. 79 Issue 1, p485 

    Focuses on a study which investigated diamond nucleation on unscratched silicon substrates using a conventional microwave plasma-enhanced chemical vapor deposition system. Effect of pretreatment process parameters on diamond nucleation; Methodology of the study; Results and discussion.

  • Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation. Arnault, J. C.; Intiso, L.; Saada, S.; Delclos, S.; Bergonzo, P.; Polini, R. // Applied Physics Letters;1/22/2007, Vol. 90 Issue 4, p044101 

    Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated...

  • Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer. Chu, Yueh-Chieh; Tu, Chia-Hao; Jiang, Gerald; Chang, Chi; Liu, Chuan-pu; Ting, Jyh-Ming; Lee, Hsin-Li; Tzeng, Yonhua; Auciello, Orlando // Journal of Applied Physics;Jun2012, Vol. 111 Issue 12, p124328 

    We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer...

  • Novel microwave plasma reactor for diamond synthesis. Fu¨ner, M.; Wild, C.; Koidl, P. // Applied Physics Letters;3/9/1998, Vol. 72 Issue 10 

    Numerical simulations were performed to predict the performance of microwave plasma reactors with various reactor geometries. The simulations include the calculation of the electric field distribution using the finite integration theory and the determination of the plasma density distribution...

  • In situ emission and mass spectroscopic measurement of chemical species responsible for diamond growth in a microwave plasma jet. Mitsuda, Yoshitaka; Tanaka, Ken-itsu; Yoshida, Toyonobu // Journal of Applied Physics;4/15/1990, Vol. 67 Issue 8, p3604 

    Presents a study which examined the chemical species responsible for diamond growth in a microwave plasma jet. Experimental details; Results and discussion; Conclusions.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics