Minority-hole diffusion length in heavily doped silicon

Wang, Chih Hsin; Misiakos, Konstantinos; Neugroschel, Arnost
May 1989
Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2233
Academic Journal
The minority-hole diffusion length in heavily doped n-type silicon wafers was measured in the doping range 1018–1020 cm-3. The experimental method is based on the lateral collection of photogenerated carriers by a semi-infinite junction. Closed form expressions available for this particular two-dimensional geometry greatly simplify the analysis of the experimental results. The results are consistent with an Auger-limited minority-carrier lifetime and a diffusion coefficient that is doping insensitive in the 1018–1020 cm-3 range.


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