In situ processing of epitaxial Y-Ba-Cu-O high Tc superconducting films on (100) SrTiO3 and (100) YS-ZrO2 substrates at 500–650 °C

Singh, R. K.; Narayan, J.; Singh, A. K.; Krishnaswamy, J.
May 1989
Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2271
Academic Journal
We report the formation of excellent quality epitaxial YBa2Cu3O7 films on (100) SrTiO3 and (100) ZrO2 (yttria stabilized) substrates in the temperature range of 500–650 °C by XECl excimer laser ablation in a 0.2 Torr oxygen ambient. By applying a dc bias voltage of +300 V to an interposing ring, we were able to reduce the substrate temperatures from 650 to 500 °C for obtaining epitaxial films. The quality of the epitaxial films was found to decrease with temperature, particularly below 550 °C. The thickness of the superconducting films was varied from 500 to 5000 Å with superconducting transition temperatures Tc (zero resistance) varying from 87 to 90 K for 650 °C deposits. The critical current density Jc of films was found to vary linearly with temperature with values of (zero magnetic field at 77 K) 5.0×106 and 1.0×106 for films deposited at 650 °C on (100) SrTiO3 and (100) yttria-stabilized zirconia substrates, respectively. X-ray diffraction, transmission electron microscopy, electron channeling patterns, and Rutherford backscattering (RBS)/channeling showed excellent epitaxial quality of films on both substrates with best values of minimum ion channeling yield of 3.5% on (100) SrTiO3 substrates.


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