TITLE

Amorphous silicon thin-film transistors with two-layer gate insulator

AUTHOR(S)
Kim, Nam-Deog; Kim, Choong-Ki; Jang, Jin; Lee, Choochon
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2079
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) which utilize two layers of amorphous silicon nitride with different composition as a gate insulator have been studied. The field-effect mobility, subthreshold slope, and stability of an a-Si:H TFT are enhanced by inserting a thin silicon-rich nitride layer between the a-Si:H and the gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a-Si:H and the top silicon-rich nitride layer, and the good dielectric quality of the bottom nitride layer.
ACCESSION #
9831349

 

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