Amorphous silicon thin-film transistors with two-layer gate insulator

Kim, Nam-Deog; Kim, Choong-Ki; Jang, Jin; Lee, Choochon
May 1989
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2079
Academic Journal
Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) which utilize two layers of amorphous silicon nitride with different composition as a gate insulator have been studied. The field-effect mobility, subthreshold slope, and stability of an a-Si:H TFT are enhanced by inserting a thin silicon-rich nitride layer between the a-Si:H and the gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a-Si:H and the top silicon-rich nitride layer, and the good dielectric quality of the bottom nitride layer.


Related Articles

  • Instability mechanism in hydrogenated amorphous silicon thin-film transistors. Schropp, R. E. I.; Verwey, J. F. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p185 

    The degradation of hydrogenated amorphous silicon under an applied field is studied in an amorphous silicon thin-film transistor. A possible mechanism for metastable defect creation due to trapping of electrons at weak bonds together with a bond-switching event is investigated. The energy for...

  • Change in bulk defect density of hydrogenated amorphous silicon by bias stress in thin film.... Hyuk-Ryeol Park; Dong-Sun Oh // Applied Physics Letters;5/27/1996, Vol. 68 Issue 22, p3135 

    Examines changes in the defect density of hydrogenated amorphous silicon in thin film transistor structures by bias stress. Method of measurement used; Discussion of the constant photocurrent method absorption; Demonstration of the experimental result on the bulk defect density.

  • Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film.... Powell, M.J.; Deane, S.C. // Applied Physics Letters;1/13/1992, Vol. 60 Issue 2, p207 

    Details the threshold voltage shift in amorphous silicon thin film transistors subjected to bias stress. Cause of the threshold voltage shift for low positive and low negative biases; Comparison of the results with oxide transistors; Difference between oxide and nitride transistors.

  • Occupation dynamics of trap states in an a-Si:H thin-film transistor. Bullock, J. N.; Wu, C. H. // Journal of Applied Physics;1/15/1991, Vol. 69 Issue 2, p1041 

    Calculates the dynamical behavior of hydrogenated amorphous silicon thin film transistors, with an emphasis on the occupation dynamics of trap states. Rate equation for the occupation function of trap states; Relations of filling the trap states with the switch-on time and emptying the trap...

  • Thin-film transistors with multistep deposited amorphous silicon layers. Yue Kuo // Applied Physics Letters;10/9/1995, Vol. 67 Issue 15, p2173 

    Examines thin-film transistors (TFT) with multistep deposited amorphous silicon layers. Effect of radio frequency power and number of layers on TFT characteristics; Mechanism of Silicon compounds plasma deposition process; Impact of dangling bonds on transistor performance.

  • Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin... Wehrspohn, R. B.; Deane, S. C. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p144 

    Focuses on a study which investigated the mechanism for silicon dangling bond defect creation in amorphous silicon thin film transistors as a result of bias stress. Film characterization; improved description of treshold voltage shift in silicon thin film transistors; Conclusion.

  • Thin-film transistor circuits on large-area spherical surfaces. Hsu, P. I.; Bhattacharya, R.; Gleskova, H.; Huang, M.; Xi, Z.; Suo, Z.; Wagner, S.; Sturm, J. C. // Applied Physics Letters;8/26/2002, Vol. 81 Issue 9, p1723 

    We report amorphous silicon (a-Si:H) thin-film transistors (TFTs) fabricated on a planar foil substrate, which is then permanently deformed to a spherical dome, where they are interconnected to inverter circuits. This dome subtends as much as 66° (∼ 1 sr) with the tensile strain reaching...

  • Simulations of short-channel and overlap effects in amorphous silicon thin-film transistors. Shaw, John G.; Hack, Mike // Journal of Applied Physics;3/1/1989, Vol. 65 Issue 5, p2124 

    Studies short-channel and overlap effects in amorphous silicon thin-film transistors (TFT) through the use of two-dimensional computer simulations. Device fabrication; Description of the numerical device modeling; Summary of the current path through the TFT with overlaps.

  • Step doping in hydrogenated amorphous silicon thin-film transistors for threshold voltage shifts. Matsumoto, Tomotaka; Mishima, Yasuyoshi // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p5058 

    Deals with a study which developed a way to control the threshold voltage in hydrogenated amorphous silicon thin-film transistors by boron doping. Information on the channel doping technique; Methodology of the study; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics