Amphoteric native defects in semiconductors

Walukiewicz, W.
May 1989
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2094
Academic Journal
We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.


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