Mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densities

Gold, A.
May 1989
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2100
Academic Journal
We present theoretical results on the mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures for remote impurity doping and homogeneous background doping. The threshold transport, recently found experimentally by C. Jiang, D. C. Tsui, and G. Weimann [Appl. Phys. Lett. 53, 1533 (1988)], is interpreted as a metal–insulator transition due to multiple scattering effects.


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