TITLE

Growth flux ratio dependence of microwave devices in molecular beam epitaxy

AUTHOR(S)
Chou, Y. C.; Lee, C. T.; Juang, F. Y.; Chang, C. C.; Chou, K.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of beam equivalent pressure ratio PAs4/PGa on electrical and microwave performance of GaAs low-noise metal-semiconductor field-effect transistors grown by molecular beam epitaxy were demonstrated. From experimental results, superior performances were achieved at the minimum beam equivalent pressure ratio of 30 under arsenic-stabilized condition. The optimum noise figure and its associated gain were attributed to the higher quality of the molecular beam epitaxial material at optimal growth conditions. An explanation of the experimental results was also proposed.
ACCESSION #
9831333

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics