Electrical resistivity of thin epitaxial NiAl buried in (Al,Ga)As

Tabatabaie, N.; Sands, T.; Harbison, J. P.; Gilchrist, H. L.; Florez, L. T.; Keramidas, V. G.
May 1989
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2112
Academic Journal
We present the first measurements of electrical resistivity for NiAl layers in (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor monocrystalline heterostructures. Layer thicknesses in the range 1.5–100 nm have been studied and all were found to be electrically continuous. Four separate components of resistivity are identified and discussed. The room-temperature resistivity is dominated by electron-phonon and interface-roughness scattering. For films 3 nm in thickness and above, the composition of the NiAl compound can be inferred from the phonon resistivity, while the residual resistivity yields the probability of specular reflection from the interfaces. This parameter is approximately 20% for the films studied.


Related Articles

  • Tuning exchange bias in ferromagnetic/ferromagnetic/antiferromagnetic heterostructures [Pt/Co]/NiFe/NiO with in-plane and out-of-plane easy axes. Gong, W. J.; Liu, W.; Liu, X. H.; Guo, S.; Feng, J. N.; Li, Bo; Zhang, Z. D. // Journal of Applied Physics;Feb2011, Vol. 109 Issue 4, p043906 

    In-plane exchange bias (EB) in [Pt/Co]n/NiFe/NiO heterostructures with orthogonal easy axes is investigated. The reversible in-plane EB effect at the ferromagnetic (FM)/FM [Pt/Co]n/NiFe interface allows one to manipulate the value and direction of the EB of the heterostructures, which can be...

  • Role of structural defects in the unipolar resistive switching characteristics of Pt/NiO/Pt structures. Chanwoo Park; Sang Ho Jeon; Seung Chul Chae; Seungwu Han; Bae Ho Park; Sunae Seo; Dong-Wook Kim // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p042102 

    We investigated the resistive switching characteristics of two types of Pt/NiO/Pt structures with epitaxial and polycrystalline NiO layers. Both of these Pt/NiO/Pt structures exhibited unipolar resistive switching. Pt/epitaxial-NiO/Pt showed unstable switching or no resistance state change after...

  • Ni3N/Ni composites with in-situ growth heterogeneous interfaces as microwave absorbing materials. Chunhong Gong; Yongshuai Jia; Xiaowei Zhao; Haojie Liu; Xiaoyan Lv; Laigui Yu; Jingwei Zhang; Jingfang Zhou // Applied Physics Letters;10/12/2015, Vol. 107 Issue 15, p1 

    We herein report the electromagnetic and microwave absorption properties of Ni3N and Ni3N/Ni composites. The Ni3N/Ni composites with controlled compositions were synthesized by an in-situ thermal decomposition of Ni3N at various calcination temperatures. The mostly optimized Ni3N/Ni composite...

  • The Static Structure of Liquid Semiconductors NiTe and NiTe2: Preliminary Results. Günay, Seçkin D.; Akdere, Ünsal; Kosovali, Fatma; Taşseven, Çetin // AIP Conference Proceedings;2007, Vol. 899 Issue 1, p616 

    The local structures of liquid NiTe and NiTe2 have been investigated by applying the integral equation theory of liquids, Hypernetted-chain (HNC). Interactions between the constituent ions are modeled via a semi-empirical potential. The three correlation functions and partial structure factors...

  • Martensitic transition and inverse magnetocaloric effect in Co doping Ni�Mn�Sn Heulser alloy. Jing, C.; Li, Z.; Zhang, H. L.; Chen, J. P.; Qiao, Y. F.; Cao, S. X.; Zhang, J. C. // European Physical Journal B -- Condensed Matter;Jan2009, Vol. 67 Issue 2, p193 

    We presented the martensitic transition and magnetocaloric effect of the substituted Heulser alloy Ni50-xCoxMn38Sn12 (x = 2, 4, and 6). A large magnetic entropy change of 37.1 J/kg K above room temperature for a magnetic field change of 50 kOe is obtained in Ni48Co2Mn38Sn12 alloy. With the...

  • Electron-transport mechanisms in metal Schottky barrier contacts to hydrogenated amorphous silicon. Heller, D. E.; Dawson, R. M.; Malone, C. T.; Nag, S.; Wronski, C. R. // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2377 

    Presents detailed electrical studies carried out on nickel, palladium and platinum Schottky barrier contacts to intrinsic silicon-hydrogen films. Diode characteristics of Schottky barrier structures; Comparison of the activation energies of the diode currents with the electron barrier heights...

  • Conformal Ni-silicide formation over three-dimensional device structures. Zhu, Zhiwei; Gao, Xindong; Kubart, Tomas; Zhang, Zhi-Bin; Wu, Dongping; Zhang, Shi-Li // Applied Physics Letters;7/30/2012, Vol. 101 Issue 5, p053508 

    This letter reports on conformal formation of ultrathin Ni-silicide films over a three-dimension structure relevant to the most advanced tri-gate transistor architecture. This is achieved by combining ionization of the sputtered Ni atoms with application of an appropriate bias to the Si...

  • Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application. Biswas, Nivedita; Gurganus, Jason; Misra, Veena; Yang, Yan; Stemmer, Susanne // Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p022105 

    Characteristics of NiSi and MoSi via full consumption of undoped silicon layers have been studied. Interaction of nickel (Ni) and molybdenum (Mo) silicides with SiO2 was evaluated in terms of work function and thermal stability. For nickel silicide, the work function values were low for samples...

  • Effect of nickel contamination on high carrier lifetime n-type crystalline silicon. Yoon, Yohan; Paudyal, Bijaya; Kim, Jinwoo; Ok, Young-Woo; Kulshreshtha, Prashant; Johnston, Steve; Rozgonyi, George // Journal of Applied Physics;Feb2012, Vol. 111 Issue 3, p033702 

    The injection-dependent lifetimes of different levels of Ni-contaminated n-type Czochralski (CZ) silicon wafers were investigated using resonant-coupled photoconductance decay (RCPCD) and quasi-steady-state photoconductance technique (QSSPC). The lifetime degradation of the most heavily...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics