Efficient light emission by impact ionization in single-barrier tunneling devices

Snow, E. S.; Kirchoefer, S. W.; Campbell, P. M.; Glembocki, O. J.
May 1989
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2124
Academic Journal
Efficient band-gap electroluminescence has been observed in n+-n--n+ single-barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field dependence of the impact ionization rate is determined. Comparisons to theory are made.


Related Articles

  • Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure. Li, Y. B.; Cockburn, J. W.; Skolnick, M. S.; Duck, J. P.; Birkett, M. J.; Larkin, I. A.; Grey, R.; Hill, G.; Hopkinson, M. // Applied Physics Letters;4/27/1998, Vol. 72 Issue 17 

    This letter reports the observation of intersubband electroluminescence from a single-period resonant tunneling structure. Intersubband emission (λapprox. 8.4 μm), with a full width at half maximum of 7 meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths...

  • Electroluminescence from bipolar resonant tunneling diodes. Van Hoof, C.; Genoe, J. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p77 

    Examines the resonant tunneling of electrons in semiconductor heterostructures. Incorporation of aluminum arsenide/gallium arsenide (GaAs) resonant tunneling structure inside a GaAs p-n junction; Achievement of peak-to-valley ratio in electroluminescence intensity; Observation of hole resonant...

  • Hot carrier recombination model of visible electroluminescence from metal-oxide-silicon tunneling diodes. Liu, C. W.; Liu, C.W.; Chang, S. T.; Chang, S.T.; Liu, W. T.; Liu, W.T.; Chen, Miin-Jang; Miin-Jang Chen; Lin, Ching-Fuh; Ching-Fuh Lin // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    We report the visible electroluminescence at room temperature from metal-oxide-silicon tunneling diodes. As biased in the Fowler-Nordheim regime, the electrons tunnel from the gate electrode through the ultrathin oxide and reach the Si anode with sufficiently high energy. The hot electrons cause...

  • Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes. Yang, Q. K.; Fuchs, F.; Schmitz, J.; Pletschen, W. // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4757 

    Trap centers with an energy level positioned 1/3 of the band gap below the effective conduction band edge are observed in the electroluminescence spectra of InAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 11 µm. The trap centers are recognized by simulating the...

  • Mid-infrared field-tunable intersubband electroluminescence at room temperature by.... Faist, Jerome; Capasso, Federico // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1144 

    Examines the electroluminescence associated with intersubband transition at room temperature by photon-assisted tunneling in coupled-quantum wells (QW). Calculation of the temperature dependence; Design of the coupled QW region; Provisions of the optical power with current and temperature...

  • Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation. Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1397 

    The reliability of electroluminescence from metal-oxide-silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated...

  • Electroluminescence spectroscopy of resonantly coupled GaAs-AlAs superlattices. Bertram, D.; Lage, H. // Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1012 

    Investigates the electroluminescence (EL) properties of resonantly coupled gallium arsenide/aluminum arsenide superlattices (SL). Use of superconductor SL for tunneling structures; Demonstration of higher subbands in SL by resonant tunneling; Insights on the light emitting mechanism of SL.

  • Enhanced quantum efficiency in polymer electroluminescence devices by inserting a tunneling barrier formed by Langmuir–Blodgett films. Kim, Young-Eun; Park, Heuk; Kim, Jang-Joo // Applied Physics Letters;7/29/1996, Vol. 69 Issue 5, p599 

    Quantum efficiency in a polymer electroluminescence device is significantly improved by inserting a thin insulating layer with the thickness of tunneling range. Four times higher quantum efficiency was obtained without the increase of the threshold voltage. Poly(methyl methacrylate)...

  • Carrier tunneling and device characteristics in polymer light-emitting diodes. Parker, I. D. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1656 

    Presents a study which examined electron carrier tunneling and device characteristics in polymer light-emitting diodes. Experimental details; Results and discussion; Improvement of device performance.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics