Shallow p+ junction formation by a reverse-type dopant preamorphization scheme

Ganin, E.; Davari, B.; Harame, D.; Scilla, G.; Sai-Halasz, G. A.
May 1989
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2127
Academic Journal
Device grade ultrashallow p+ junctions have been fabricated by a novel ion implantation scheme. The novelty of the method is in using antimony to amorphize silicon prior to a low-energy boron implantation. Antimony satisfies a combination of two requirements lacking from all previously applied preamorphization schemes. First, due to the heavy mass of antimony, amorphization of silicon is achieved with a minimal amount of implantation damage. Second, and most important, antimony is a dopant of an opposite type than boron. Because of this, the inevitable implant tail of the preamorphizing species serves to confine the depth of the p layer. The optimized conditions for the application of this scheme have been determined. Junctions below 100 nm in depth, with less than 200 Ω/[Laplacian_variant] sheet resistance and junction leakage of 10 nA/cm2, have been achieved. The electrical results have been correlated with the residual defect structure observed by cross-sectional transmission electron microscopy.


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