Sidewall damage in n+-GaAs quantum wires from reactive ion etching

Cheung, R.; Lee, Y. H.; Knoedler, C. M.; Lee, K. Y.; Smith, T. P.; Kern, D. P.
May 1989
Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2130
Academic Journal
Electron cyclotron resonance and radio frequency reactive ion etching have been used to fabricate narrow n+-GaAs wires employing CCl2F2/He as the etch gas. A comparison of the induced sidewall damage is made using room-temperature conductivity measurements of the etched structures and the effect of overetching is investigated. In addition, preliminary analysis of low-temperature transport reveals that the amplitude of universal conductance fluctuations is extremely sensitive to sidewall damage.


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