Influence of band-gap shrinkage on the carrier-induced refractive index change in InGaAsP

Botteldooren, D.; Baets, R.
May 1989
Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p1989
Academic Journal
The refractive index change induced by depletion of highly doped n-type InGaAsP materials is calculated. A new, numerically simple and accurate model for the high carrier density band-gap shrinkage is introduced. In contrast to the results of earlier calculations, our results show that the refractive index change depends only weakly on the difference between the optical wavelength used and the band-gap wavelength.


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