TITLE

Ultralong minority-carrier lifetimes in GaAs grown by low-pressure organometallic vapor phase epitaxy

AUTHOR(S)
Molenkamp, L. W.; Kampschöer, G. L. M.; de Lange, W.; Maes, J. W. F. M.; Roksnoer, P. J.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p1992
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured minority-carrier lifetimes of up to 4.9 μs in GaAs layers that have been grown by low-pressure organometallic vapor phase epitaxy. These lifetimes, representing a major improvement compared with previously obtained results, are governed by radiative recombination processes. Carbon incorporation during crystal growth at low arsine partial pressures is of prime importance in understanding the origin of these very long lifetimes.
ACCESSION #
9831237

 

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