TITLE

Atomic layer epitaxy of GaAs using triethylgallium and arsine

AUTHOR(S)
Ohno, H.; Ohtsuka, S.; Ishii, H.; Matsubara, Y.; Hasegawa, H.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p2000
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.
ACCESSION #
9831233

 

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