TITLE

Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine

AUTHOR(S)
Haacke, G.; Watkins, S. P.; Burkhard, H.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p2029
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.
ACCESSION #
9831218

 

Related Articles

  • In-situ observation of MOVPE epitaxial growth. Richter, W. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 1, p129 

    Metal organic vapour phase epitaxy (MOVPE) is nowadays one of the leading techniques for epitaxial growth. While the processes in the gas phase of MOVPE are reasonably well understood, the processes on the growing surface are not. This situation is in contrast to molecular beam epitaxy (MBE),...

  • Buffer layer effects on residual stress in InP on Si substrates. Sugo, Mitsuru; Yamaguchi, Masafumi // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1754 

    Heteroepitaxial growth of InP on Si(100) substrates using InP direct growth, and with a GaAs or GaP buffer layer has been grown by organometallic vapor phase epitaxy (OMVPE). The effects of buffer layers on residual stress in InP films are examined. For InP/(GaP buffer layer)/Si, stress...

  • Scattering mechanisms and defects in InP epitaxially grown on (001) Si substrates. Hansen, K.; Peiner, E.; Tang, G.-P.; Bartels, A.; Schlachetzki, A. // Journal of Applied Physics;10/15/1994, Vol. 76 Issue 8, p4705 

    Provides information on a study that examined carrier concentration and mobility of unintentionally doped InP layers grown directly on silicon using metal-organic vapor-phase epitaxy. Methodology of the study; Results of the study; Conclusion.

  • On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy. Polyakov, A. Y.; Shin, M.; Freitas, J. A.; Skowronski, M.; Greve, D. W.; Wilson, R. G. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6349 

    Presents a study which investigated the origin of electrically active defects in aluminum gallium nitride (AlGaN) alloys grown by organometallic vapor phase epitaxy. Composition dependence of ionization energies of dominant donors; Values of energy gaps for AlGaN layers; Composition dependence...

  • Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing. Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. // Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3008 

    The metalorganic chemical vapor deposition of a highly strained InGaAsN quantum-well (QW) surrounded by (In)GaAsP direct barrier layers is investigated. We found that growth pause annealing with ASH[sub 3], performed immediately before and after the growth of the QW, significantly improves the...

  • Characterization of tunable band gap aluminum indium oxide films prepared on SiO (0001) by MOCVD. Du, Xuejian; Li, Zhao; Luan, Caina; Wang, Weiguang; Wang, Mingxian; Ma, Jin // Journal of Materials Science: Materials in Electronics;Jan2016, Vol. 27 Issue 1, p599 

    The ternary tunable band gap AlInO films with different Al compositions of x [Al/(Al + In) atomic ratio] were prepared on the SiO (0001) substrates by the metal organic chemical vapor deposition method at 650 °C. The influence of different Al contents on the structural, electrical and optical...

  • Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition. Ray, S.; Ruden, P.; Sokolov, V.; Kolbas, R.; Boonstra, T.; Williams, J. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1666 

    Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively....

  • Heterointerface stability in GaAs-on-Si grown by metalorganic chemical vapor deposition. Pearton, S. J.; Malm, D. L.; Heimbrook, L. A.; Kovalchick, J.; Abernathy, C. R.; Caruso, R.; Vernon, S. M.; Haven, V. E. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p682 

    The stability of the electrical and structural properties of GaAs directly deposited on Si by metalorganic chemical vapor deposition is examined. Extended annealing at 900 °C leads to substantial diffusion of Si across the heterointerface while under the same conditions there is no...

  • Hydrogen physisorption in metal-organic frameworks: concepts and quantum chemical calculations. Sastre, German // Theoretical Chemistry Accounts: Theory, Computation, & Modeling;Nov2010, Vol. 127 Issue 4, p259 

    Storage of hydrogen by physisorption in metal-organic frameworks is reviewed from the perspective of quantum chemistry. Concepts regarding the interaction of hydrogen with metals are revised and the specific features of metal-organic frameworks are explained. The influence of the type of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics