Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine

Haacke, G.; Watkins, S. P.; Burkhard, H.
May 1989
Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p2029
Academic Journal
The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.


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