Intersubband population inversion in quantum wire structures

Briggs, S.; Jovanovic, D.; Leburton, J. P.
May 1989
Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p2012
Academic Journal
When the spacing between subbands in a quantum wire is equal to the optic phonon energy a situation occurs under longitudinal field conditions where the upper subband population is enhanced with respect to the lower subband. We focus our investigation on the case where a third, intermediate subband is located slightly below the upper subband. We use a Monte Carlo simulation and obtain a population inversion between the upper and intermediate subbands. Intersubband optical transitions with the possibility of far-infrared stimulated emission seem to be significant.


Related Articles

  • Quantum cables as transport spectroscope for quasi-one-dimensional density of states of cylindrical quantum wires. Zeng, Z. Y.; Zeng, Z.Y.; Xiang, Y.; Zhang, L. D.; Zhang, L.D. // Applied Physics Letters;9/25/2000, Vol. 77 Issue 13 

    We propose that quantum cables can be used as a kind of transport spectroscope to obtain directly the quasi-one-dimensional (Q1D) density of states (DOS) of cylindrical quantum wires. By simultaneously measuring the direct current through the cylindrical quantum wire and the leaky tunneling...

  • Resonant tunneling of two-dimensional electrons into one-dimensional subbands of a quantum wire. Zaslavsky, A.; Tsui, D.C.; Santos, M.; Shayegan, M. // Applied Physics Letters;4/1/1991, Vol. 58 Issue 13, p1440 

    Studies the resonant tunneling of two-dimensional electrons into one-dimensional subbands of a quantum wire. Identification of the tunneling by negative differential resistance features in the transport characteristics; Agreement of the bias positions with simple tunneling theory estimates.

  • Resonant tunneling of two-dimensional electrons through a quantum wire: A negative transconductance device. Luryi, Serge; Capasso, Federico // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1347 

    A novel three-terminal resonant-tunneling structure is proposed in which the double potential barrier is defined within the plane of a two-dimensional (2-D) electron gas. The resonant tunneling of 2-D electrons into a 1-D "quantum wire" is controlled not only by a source-to-drain voltage but...

  • Arrays of (Zn,Mn)S quantum wires with well-defined diameters below 10 nm. Chen, L.; Klar, P. J.; Heimbrodt, W.; Brieler, F. J.; Fröba, M.; Krug von Nidda, H.-A.; Kurz, T.; Loidl, A. // Journal of Applied Physics;1/15/2003, Vol. 93 Issue 2, p1326 

    Zn[sub 1 - x]Mn[sub x]S with x = 1% to 30% were formed inside the ordered pore systems of different mesoporous SiO[sub 2] matrices. Due to the highly ordered host structure, regular arrays of Zn[sub 1 - x]Mn[sub x]S quantum wires with diameters of 3.1 nm and 5.6 nm, respectively, separated by 2...

  • Spontaneous Spin Polarization of Electrons in Quantum Wires. Shelykh, I. A.; Bagraev, N. T.; Ivanov, V. K.; Klyachkin, L. E. // Semiconductors;Jan2002, Vol. 36 Issue 1, p65 

    The quantum conductance staircase of the one-dimensional (1D) channel is analyzed for a weak filling of the lower 1D subbands, when the exchange electron-electron interaction of carriers dominates over their kinetic energy. Main attention is paid to considering the behavior of the...

  • Saturation of phase coherence length in GaAs/AlGaAs on-facet quantum wires. Fukai, Yoshino K.; Yamada, Syoji; Nakano, Hayato // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2123 

    Phase coherence length L[lowercase_phi_synonym] of on-facet quantum wires is determined at temperatures down to 50 mK by three methods: magnetoresistance, conductance fluctuation amplitude, and the conductance fluctuation correlation field. It is found that L[lowercase_phi_synonym] saturates...

  • Emission wavelength engineering of InAs/InP(001) quantum wires. Fuster, D.; Gonz�lez, L.; Gonz�lez, Y.; Mart�nez-Pastor, J.; Ben, T.; Ponce, A.; Molina, S. I. // European Physical Journal B -- Condensed Matter;Aug2004, Vol. 40 Issue 4, p433 

    In this work we have studied the dependence of the optical properties of self-assembled InAs quantum wires (QWr) grown on InP(001) on the growth temperature of the InP cap layer, as a mean for controlling the InAs QWr size. Our main result is that we can tune the emission wavelength of InAs QWr...

  • Band structures and optical properties of Ga1-xInxAs quantum wires grown by strain-induced... Li, ang-Xin; Chang, Yia-Chung // Journal of Applied Physics;12/1/1998, Vol. 84 Issue 11, p6162 

    Provides information on a study which investigated the band structures and optical matrix elements of strained multiple quantum wires (QWR). Theoretical background; Experimental approach; Results and discussions; Conclusion.

  • Resonant tunneling through a bend in a quantum wire. Jian Wang; Hong Guo // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p654 

    Examines the resonant tunneling through a corner in two-dimensional L-shape quantum wire. Effect of double potential barrier insertion on transmission properties of quantum wire; Role of resonant tunneling in reflection elimination at the corner region; Control of transmission peak at resonant...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics