TITLE

Long-lived InGaAs quantum well lasers

AUTHOR(S)
Fischer, S. E.; Waters, R. G.; Fekete, D.; Ballantyne, J. M.; Chen, Y. C.; Soltz, B. A.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1861
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
ACCESSION #
9831171

 

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