TITLE

Epitaxial growth of InSb (111) on sapphire (0001)

AUTHOR(S)
Jamison, K. D.; Bensaoula, A.; Ignatiev, A.; Huang, C. F.; Chan, W. S.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, transmission electron microscopy, and scanning electron microscopy data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the <111> direction. Mobility data show room-temperature mobilities as high as 1×104 cm2 /V s from some regions on the wafer.
ACCESSION #
9831142

 

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