TITLE

Electrical properties and band offsets of InAs/AlSb n-N isotype heterojunctions grown on GaAs

AUTHOR(S)
Nakagawa, Atsushi; Kroemer, Herbert; English, John H.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1893
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The MBE growth and selected properties of InAs/AlSb n-N isotype heterojunctions on n+-GaAs substrates are described. Because of a large conduction-band offset (1.35 eV), these junctions behave like Schottky barriers, with excellent rectification characteristics, despite the presence of a very high density (>107 cm-2) of threading dislocations resulting from the large lattice mismatch (7%) between AlSb and the GaAs substrate. The forward I-V characteristics, corrected for series resistance, exhibit a large nonideality factor of about 1.8, suggesting that the main current flow is along a defect path, presumably related to the misfit dislocations. Reverse C-V characteristics exhibit a perfectly linear 1/C2 vs V plot, from which a conduction-band offset of 1.35±0.05 eV is deduced. This value is in excellent agreement with the value predicted from the known band offsets in InAs/GaSb and GaSb/AlSb.
ACCESSION #
9831109

 

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