High-power, diffraction-limited, narrow-band, external-cavity diode laser

Sharfin, W. F.; Seppala, J.; Mooradian, A.; Soltz, B. A.; Waters, R. G.; Vollmer, B. J.; Bystrom, K. J.
May 1989
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1731
Academic Journal
We demonstrate an external-cavity GaAs/GaAlAs single quantum well diode laser that produces 1.6 W of cw power with 32% overall efficiency in a spectral band of 0.02 nm. Over 0.1 W is measured in a single-frequency, diffraction-limited beam.


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