TITLE

Optical detection of high-field domains in GaAs/AlAs superlattices

AUTHOR(S)
Grahn, H. T.; Schneider, H.; Klitzing, K. v.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1757
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the formation of high-field domains in undoped GaAs/AlAs superlattices under strong illumination. The photocurrent-voltage characteristics showed an oscillatory-like behavior which is attributed to the existence of high-field domains. We used photoluminescence (PL) spectroscopy to identify the existing domains as a function of electric field perpendicular to the layers. A total of five PL lines was observed and assigned to different domains through their Stark shift.
ACCESSION #
9831071

 

Related Articles

  • Voltage tunable SiGe photodetector: A novel tool for crypted optical communications through.... Masini, G.; Colace, L. // Applied Physics Letters;6/16/1997, Vol. 70 Issue 24, p3194 

    Demonstrates a voltage tunable silicon germanide (SiGe)/Si superlattice photodetector. Capability of SiGe/Si photodetector to do complex mixing functions between optical signals; Calculation of current flow in SiGe/Si device; Development of methods for optical signal encryption based on...

  • Performance and application of a superlattice infrared photodetector with a blocking barrier. Chen, C. C.; Chen, H. C.; Hsu, M. C.; Hsieh, W. H.; Kuan, C. H.; Wang, S. Y.; Lee, C. P. // Journal of Applied Physics;2/1/2002, Vol. 91 Issue 3, p943 

    An infrared photodetector that contains a superlattice structure and a blocking barrier was investigated. The photodetector shows advantages including a low operating voltage (<0.7 V), wide detection bandwidth, flexible miniband engineering, and in particular, voltage-tunable spectral...

  • Dynamic Wannier-Stark effect in semiconductor superlattices. Khurgin, J.B.; Lee, S.J. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3275 

    Examines the optically induced effective mass change due to localization degree changes in semiconductor superlattices. Energy shift of the dressed states in band-to-band and excitonic transition in the structures; Delocalization in the disordered system of traps; Application of the effect as a...

  • Electronic and optical properties of periodically Si delta-doped InP grown by low pressure... Souza, P.L.; Yavich, B.; Pamplona-Pires, M.; Henriques, A. B.; Gonçcalves, L. C. D. // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1700 

    Investigates the mobility and photoluminescence characteristics of a series of Si delta-doped InP superlattices as a function of the superlattice period. Electronic transport; Broad band emission detected for the periodic structures at energies higher than the InP band gap; Depth profile.

  • CdTe photoluminescence in HgTe-CdTe superlattices. Feldman, Bernard J.; Wroge, M. L.; Leopold, D. J. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1516 

    Presents a study which investigated CdTe photoluminescence in HgTe-CdTe superlattices. Details of the experimental techniques used; Explanation for the presence of deep-level lines in the superlattices; Illustration of the liquid-helium photoluminescence spectrum of HgTe-CdTe superlattice.

  • Electric field dependent intersubband optical transitions in a ZnCdSe–ZnSe superlattice. Guan, Z. P.; Kobayashi, T. // Applied Physics Letters;9/30/1996, Vol. 69 Issue 14, p2074 

    The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in...

  • Effect of growth interruptions on the interfaces of InGaAs/AIAsSb superlattice. Georgiev, Nikolai; Mozume, Teruo // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2371 

    Investigates the effect of growth interruption times combined with selective group-V species exposure of short-period superlattice structure with photoluminescence, x-ray diffraction and reflection high-energy electron diffraction. X-ray diffraction spectrum of a 30-period superlattice growth...

  • Photoluminescence from Si/Ge superlattices. Montie, E. A.; van de Walle, G. F. A.; Gravesteijn, D. J.; van Gorkum, A. A.; Bulle-Lieuwma, C. W. T. // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p340 

    We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1-xGex alloy buffer layer. X-ray diffraction and Rutherford backscattering were used to analyze the composition of the samples. Luminescence bands at 1.5 and 1.6 μm originate from the...

  • Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device. Kunold, A.; Pereyra, P. // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5018 

    The optical response of an AlGaN/GaN/(In[sub x]Ga[sub 1-x]N)[sup n]/GaN/AlGaN heterostructure is obtained from precise, and comparatively simple, transition probability calculations. A comprehensive approach to evaluate these quantities from rigorous expressions of the heterostructure's energy...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics