TITLE

Anomalous temperature dependence of the ordered Ga0.5In0.5P photoluminescence spectrum

AUTHOR(S)
Kondow, Masahiko; Minagawa, Shigekazu; Inoue, Youji; Nishino, Taneo; Hamakawa, Yoshihiro
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1760
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature dependence of the photoluminescence spectrum of Ga0.5 In0.5 P/GaAs grown by organometallic vapor phase epitaxy is measured. Samples with a highly long-range ordered structure show anomalous behavior, where peak energy changes with temperature exhibiting Z-shape dependence. In the range between 100 and 30 K, peak energy decreases monotonously with decreasing temperature, and below 30 K, begins to increase, splitting into two peaks. The most probable cause of this behavior is crystal defects related to the long-range ordered structure.
ACCESSION #
9831068

 

Related Articles

  • Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy. Ke, W. C.; Fu, C. P.; Chen, C. Y.; Lee, L.; Ku, C. S.; Chou, W. C.; Chang, W.-H.; Lee, M. C.; Chen, W. K.; Lin, W. J.; Cheng, Y. C. // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p191913 

    Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL...

  • Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition. Reitzenstein, S.; M√ľnch, S.; Hofmann, C.; Forchel, A.; Crankshaw, S.; Chuang, L. C.; Moewe, M.; Chang-Hasnain, C. // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p091103 

    The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical vapor deposition. By means of low temperature microphotoluminescence experiments, the authors determined the optical properties of as-grown NWs. The emission of individual NWs is characterized by small...

  • Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells. Wang, Y.; Pei, X. J.; Xing, Z. G.; Guo, L. W.; Jia, H. Q.; Chen, H.; Zhou, J. M. // Journal of Applied Physics;2/1/2007, Vol. 101 Issue 3, p033509 

    The influence of ramp-up time of barrier growth temperature on optical properties is investigated for InGaN/GaN quantum wells deposited on sapphire substrate by metal organic chemical vapor deposition. Three ramp-up times are used from the low and high growth temperatures for the well and...

  • Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates. Liang, S.; Zhu, H. L.; Wang, W. // Journal of Applied Physics;11/15/2006, Vol. 100 Issue 10, p103503 

    The effects of growth temperature on the bimodal size distribution of InAs quantum dots on vicinal GaAs(100) substrates grown by metal organic chemical vapor deposition are studied. An abnormal trend of the bimodal size evolution on temperature is observed. With the increase of the growth...

  • 2.51 eV photoluminescence from Zn-doped CuAlSe[sub 2] epilayers grown by low-pressure.... Chichibu, S.; Matsumoto, S.; Shirakata, S.; Isomura, S.; Higuchi, H. // Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3306 

    Examines the photoluminescence (PL) peak in zinc-doped copper aluminum selenide epilayers grown by low-pressure metalorganic chemical vapor deposition. Absence of PL peak in aluminum-rich layers; Use of secondary ion mass spectrometry in estimating zinc doping concentration; Effect of zinc...

  • Excitation intensity dependence of photoluminescence in Ga0.52In0.48P. DeLong, M. C.; Taylor, P. C.; Olson, J. M. // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p620 

    The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering...

  • Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase.... Fang, Z.M.; Ma, K.Y.; Cohen, R.M.; Stringfellow, G.B. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1446 

    Examines the infrared photoluminescence (PL) from indium arsenide epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy. Dependence of PL on growth temperature; Decrease of integrated PL intensity; Identification of carbon as a dominant impurity.

  • Deep-level photoluminescence studies on Si-doped, metalorganic chemical vapor deposition grown AlxGa1-xAs. Visser, E. P.; Tang, X.; Wieleman, R. W.; Giling, L. J. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3266 

    Presents a study that performed a deep-level photoluminescence (PL) on silicon-doped, metal organic chemical vapor deposition grown Al[subx]Ga[sub1-x]As as a function of the growth parameters. Novel PL emissions for Al[subx]Ga[sub1-x]As that was recorded; Factors to which the systematic...

  • Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30.... Notzel, Richard; Temmyo, Jiro; Kamada, Hidehiko; Furuta, Tomofumi // Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p457 

    Examines the photoluminescence (PL) emission of strained indium gallium arsenide quantum disks self-organized on gallium arsenide (311)boron substrates. Use of metalorganic vapor phase epitaxy; Control of the disk sizes by the indium content of the material; Characterization of the PL spectra...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics