Electro-optic voltage profiling of modulation-doped GaAs/AlGaAs heterostructures

Hendriks, P.; Schnitzeler, F. J. M.; Haverkort, J. E. M.; Wolter, J. H.; de Kort, Kees; Weimann, G.
May 1989
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1763
Academic Journal
The electro-optic effect of GaAs is applied to profile the voltage distribution of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.


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