Na+ ion implanted ZnSe epitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy

Yodo, Tokuo; Yamashita, Ken
May 1989
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1778
Academic Journal
We have introduced Na impurities by ion implantation into undoped ZnSe heteroepitaxial layers grown at 250 °C by atmospheric pressure metalorganic vapor phase epitaxy. The implanted Na impurity forms not only an acceptor level but also a deep level. The formation of implanted Na acceptor levels begins to increase at relatively low annealing temperatures (less than 450 °C). Annealing between 451 and 557 °C is the optimum condition to form acceptor levels effectively while generating a low density of deep levels. Annealing of temperatures significantly higher than 550 °C does not form Na acceptors, but generates deep levels.


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