Tunneling through AlAs barriers: Γ–X transfer current

Landheer, D.; Liu, H. C.; Buchanan, M.; Stoner, R.
May 1989
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1784
Academic Journal
We have investigated Γ–X intervalley transfer tunneling by measuring currents at low temperature in a series of single AlAs barrier samples grown on GaAs substrates. The transfer occurs at AlAs-GaAs interfaces and is intrinsic because the translational symmetry is broken in the growth direction of the epitaxial layered structures. Calculated current-voltage characteristics employing a simple effective mass model which includes Γ–X transfer at heterointerfaces agree reasonably well with experiments, while calculations assuming only the Γ-band potential predict currents several orders of magnitude lower than experiments.


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