Resonant Raman scattering of In+-implanted CdTe and Cd0.23Hg0.77Te

Lusson, A.; Wagner, J.; Ramsteiner, M.
May 1989
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1787
Academic Journal
In+ -implanted CdTe and Cd0.23 Hg0.77 Te have been studied by resonant Raman scattering. Dipole-forbidden but defect-induced scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is strongly affected by implantation of 350 keV In+ with doses ranging from 1011 to 5×1014 ions/cm2 . The intensity ratio of the one-LO and the two-LO phonon lines is found to be a measure of the implantation damage in CdTe and in the alloy Cd0.23 Hg0.77 Te. The observed implantation effects on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances as demonstrated for the E0 +Δ0 gap resonance in CdTe.


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