Anomalous diffusion of nitrogen in nitrogen-implanted silicon

Hockett, R. S.
May 1989
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1793
Academic Journal
A secondary-ion mass spectrometry analysis of the coimplantation of nitrogen, carbon, and oxygen into float-zone silicon followed by rapid thermal annealing for 10 s at different temperatures is used to study the anomalous diffusion behavior of nitrogen in silicon. The results may be only partially explained by a model of paired nitrogen atom diffusion. The complexity of the diffusion of nitrogen in ion-implanted samples, with and without coimplants, and the expectation that the nitrogen after annealing may be in many different forms, suggest that studies which use nitrogen implantation for basic understanding of nitrogen-related defects may be misleading.


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