Observation of apparent inelastic tunneling between Landau levels in superlattices

Higman, T. K.; Favaro, M. E.; Miller, L. M.; Emanuel, M. A.; Coleman, J. J.
May 1989
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1751
Academic Journal
Evidence of the elastic and inelastic components of sequential resonant tunneling in AlAs/GaAs superlattices is presented. Magnetic field data (B parallel to current flow) show that as the energy spacing between the Landau levels in the quantum wells is changed, the corresponding density of states available for tunneling via inelastic scattering paths is changed and thus the magnetic field influences the inelastic portion of the current.


Related Articles

  • Resonant tunneling transport through GaAs/AlGaAs superlattices in strong tilted magnetic field. Telenkov, M. P.; Mityagin, Yu. A. // Journal of Experimental & Theoretical Physics;Sep2006, Vol. 103 Issue 3, p428 

    An analysis is presented of the transverse resonant tunneling transport through GaAs/AlGaAs superlattices due to tunneling between Landau levels in quantum wells in a strong tilted magnetic field. A high tunneling rate is demonstrated between Landau levels with Δ n ≠ 0 in a magnetic...

  • The self-sustained current oscillation and the dynamics in superlattices under the action of electric and magnetic fields. Yang, Gui; Meng, Hao; Zhang, Ling-Feng; Zhou, Shi-Ping // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p123701 

    Self-sustained time-dependent current oscillations have been found in weakly coupled GaAs/AlAs superlattices when the sequential resonant tunneling between adjacent quantum wells is the main electron transport mechanism. The oscillation regime was tunable by varying the doping densities and...

  • Resonant magneto-tunneling through shallow impurity states in double barrier heterostructures. Gutierrez, H. Paredes; Porras-Montenegro, N.; Arce, J. C.; Latge, A. // Journal of Applied Physics;5/1/2004, Vol. 95 Issue 9, p4890 

    A theoretical study is presented of the effects of in-plane magnetic fields on the I–V characteristic curves associated with resonant electron tunneling through shallow impurity states in GaAs/(Al,Ga)As double-barrier heterostructures. A simple one-band tight-binding Hamiltonian is used...

  • Transverse magnetic field studies in ZnSe/BeTe resonant tunneling structures. Lunz, U.; Keim, M.; Waag, A.; Faschinger, W.; Landwehr, G. // Applied Physics Letters;4/27/1998, Vol. 72 Issue 17 

    We report on resonant electron tunneling in ZnSe/BeTe double-barrier, single-quantum-well heterostructures under high magnetic fields. Current–voltage characteristics have been investigated in the presence of a magnetic field B perpendicular to the tunneling current (B⊥I). The effect...

  • Incommensurate Filling of Ultracold Spin-1 Atoms in Optical Superlattice with a Weak Magnetic Field. Zheng, Gong-Ping; Qin, Shuai-Feng; Jian, Wen-Tian; Wang, Shou-Yang // Journal of Low Temperature Physics;Aug2013, Vol. 172 Issue 3/4, p289 

    The ground states of ultracold spin-1 atoms trapped in an optical superlattice in a weak magnetic field with incommensurate filling of three atoms in one double-well are obtained. It is shown that the ground-state diagrams of the reduced double-well model are remarkably different for the...

  • Role of interface optical phonons in magnetotunneling in asymmetric double-barrier structures. Yan, Zu Wei; Liang, X. X. // Journal of Applied Physics;1/15/2002, Vol. 91 Issue 2, p724 

    The role of interface-optical (IO) phonons in tunneling through an asymmetric double barrier structure in a magnetic field perpendicular to the barriers is studied. The phonon-assisted tunneling current densities are calculated and the numerical results for typical Al[sub x]Ga[sub...

  • Comparison of hard magnetic electrodes for magneto-electronics by magnetic force microscopy. Bru¨ckl, H.; Schmalhonst, J.; Boeve, H.; Gieres, G.; Wecker, J. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7029 

    Both spin valve sensor elements and magnetic tunnel junctions usually consist of a magnetically fixed hard magnetic layer and a soft magnetic counter electrode which can rotate freely in an external driving field. In order to yield reliable sensor signals, the hard magnetic electrode should be...

  • Anomalous tunneling magnetoresistance in junctions with an Au dusting layer at the Co/Al[sub 2]O[sub 3] interface. Shim, Heejae; Cho, B. K.; Kim, Jin-Tae // Journal of Applied Physics;3/1/2003, Vol. 93 Issue 5, p2812 

    We report an anomalous magnetotransport in a magnetic tunnel junction (MTJ) containing an Au dusting layer with Au thickness 0.6 nm at the Co/Al[sub 2]O[sub 3] interface, where the Co layer is pinned by the underlying FeMn layer. Despite its structure being exchange biased, the junction with the...

  • Electronic noise in magnetic tunnel junctions. Ingvarsson, S.; Xiao, Gang // Journal of Applied Physics;4/15/1999 Part 2A of 2, Vol. 85 Issue 8, p5270 

    Studies the bias and magnetic field dependence of voltage noise in metallic magnetic tunnel junctions with areal dimensions. Fabrication of magnetic tunnel junctions; Magnetoresistance and thickness of the junctions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics