TITLE

Double-crystal x-ray diffraction from Si1-xGex/Si superlattices: Quantification of peak broadening effects

AUTHOR(S)
Barnett, S. J.; Brown, G. T.; Houghton, D. C.; Baribeau, J.-M.
PUB. DATE
May 1989
SOURCE
Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1781
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Double-crystal x-ray diffraction has been successfully used to study dimensional and compositional variations in Si1-x Gex /Si superlattices. For most samples studied an adequate agreement between theoretical and experimental diffraction profiles is obtained by using a theoretical model (kinematical) which assumes uniform superlattices with abrupt interfaces. In some samples, however, the superlattice-related diffraction peaks reveal an asymmetric broadening which is shown by comparison with dynamical diffraction simulations to be due to a grading in layer compositions and thicknesses throughout the superlattice stack. Detailed analysis of the diffraction data identified a gradual drift of 1.25% in the Ge flux during molecular beam epitaxy (MBE) growth. The MBE system parameters were modified to compensate for this effect and allow the growth of more structurally perfect strained-layer superlattices.
ACCESSION #
9831005

 

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