Production of disilane and silyl sticking coefficients during plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon

McCaughey, Michael J.; Kushner, Mark J.
April 1989
Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1642
Academic Journal
The rate of production of disilane (Si2H6) in silane (SiH4) plasmas by gas phase and surface-catalyzed processes is examined. The discussion is based on results from plasma chemistry and surface deposition computer models. The surface model simulates the adsorption of silane radicals from the plasma on a growing amorphous silicon film and the subsequent desorption from the surface of the nonadhering SiH3 radicals as Si2H6. The rate of generation of Si2H6 from the surface reactions is compared to the rate of generation due to plasma reactions. We find that for conditions which are typical of those used for deposition of amorphous silicon, production of disilane is likely dominated by surface-catalyzed processes. The rate of production, though, depends on the sticking coefficient of SiH3, which we find to be a function of plasma conditions.


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