Tunable tunneling magnetoresistance in a ferromagnet-metal-insulatorferromagnet tunneling junction

Sui-Pin Chen
May 2010
Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C716-1
Academic Journal
The tunneling magnetoresistance (TMR) ratio is investigated in a ferromagnet- metal-insulator-ferromagnet planar tunneling junction by use of the spin-polarized free-electron model. In this paper, the bias voltage is exploited to alter the tunneling direction and to tune the barrier height of the insulator, and then to shift oscillatory peaks of the attenuated TMR ratio. We find that the phase change between the forward and backward bias voltages is larger than the phase change due the strength of the bias voltages, and that the direction of the bias voltages can be used to control the sign of the TMR ratio if the wave vector within the M2 layer is close to the imaginary wave vector within the I3 insulator.


Related Articles

  • Theory of oscillatory tunneling magnetoresistance. Lee, B. C. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C708-1 

    An analytical form of the oscillatory tunneling magnetoresistance (TMR) is obtained for a magnetic tunnel junction with a single-crystal nonmagnetic layer inserted. The full-band structures are taken into account and the TMR is expressed with spin-dependent reflection amplitudes at the Fermi...

  • Magnetic tunnel junctions with large tunneling magnetoresistance and small saturation fields. Egelhoff, Jr., W. F.; Höink, V. E.; Lau, J. W.; Shen, W. F.; Schrag, B. D.; Xiao, G. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C705-1 

    There is a continuing need for greater sensitivity in magnetic tunnel junction (MTJ) sensors. We have found a new approach to achieving large tunneling magnetoresistance (TMR) with a very soft free layer. The high TMR is achieved by conventional means of annealing a bottom pinned MTJ that has Ta...

  • Magneto-optical and magnetoresistive properties of CoFe-MgO nanocomposite films. Kravets, A. F.; Kravets, V. G.; Korenivski, V. // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09A947-1 

    Nanocomposite CoFe-MgO films, where magnetic CoFe grains are embedded into an insulating MgO matrix, show a pronounced correlation between the tunneling magnetoresistance (TMR) and the magnetorefractive effect properties. The effect is due to the contribution of the spin-dependent conductivity...

  • Giant magnetoresistance in TI2Mn2O7 with the pyrochlore... Shimakawa, Y.; Kubo, Y. // Nature;1/4/1996, Vol. 379 Issue 6560, p53 

    Reports on materials exhibiting giant magnetoresistance (GMR) which undergo a large change in electrical resistance in response to an applied magnetic field. What is GMR; Observations of GMR on TI2Mn2O7; Structure of GMR; Findings from observations.

  • Erratum: "Tuning spin transport properties and molecular magnetoresistance through contact geometry" [J. Chem. Phys. 140, 044716 (2014)].  // Journal of Chemical Physics;6/14/2014, Vol. 140 Issue 22, p229903-1 

    A correction to the article "Tuning spin transport properties and molecular magnetoresistance through contact geometry" that was published online in the June 13, 2014 issue is presented.

  • Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling. Worledge, D. C.; Trouilloud, P. L. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p84 

    We demonstrate a method for measuring magnetoresistance (MR) and resistance area product (RA) of unpatterned magnetic tunnel junction film stacks. The RA is measured by making a series of four point probe resistance measurements on the surface of an unpatterned wafer at various probe spacings....

  • Giant magnetoresistance multilayers of high thermal stability with thicker magnetic layers. Hossain, S. A.; Pirkle, B. H.; Yang, J.; Parker, M. R. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p5817 

    Describes a methodology for the improvement of thermal stability of giant megnetoresistive (GMR) NiFeCo/Cu multilayers. Impact of high-temperature anneal on GMR magnitude and field sensitivity; Details of the experimental techniques used.

  • Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads. Weymann, Ireneusz // Journal of Applied Physics;2015, Vol. 117 Issue 17, p17D704-1 

    We analyze the spin-dependent linear-response transport properties of double quantum dots strongly coupled to external ferromagnetic leads. By using the numerical renormalization group method, we determine the dependence of the linear conductance and tunnel magnetoresistance on the degree of...

  • Investigations of interface spin asymmetry and interfacial resistance in FexCo100-x/Ag interface. Jung, J. W.; Jin, Z.; Shiokawa, Y.; Sahashi, M. // Journal of Applied Physics;2015, Vol. 117 Issue 17, p17A323-1 

    We investigated current-perpendicular-to-plane (CPP) magnetotransport parameters of FexCo100-x/ Ag interfaces: interface specific resistance (ARF/N), extended interface resistance (AR* F/N), and spin scattering asymmetry (γ). We also investigated the dependence of interfacial parameters on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics